IGW30N60H3

Mfr. #:: IGW30N60H3
製造商:: Infineon Technologies
描述:: IGBT Transistors 600V HI SPEED SW IGBT
生命週期:: 製造商新產品
數據表:: IGW30N60H3 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: IGBT - 單

系列: IGW30N60

打包: 管子

部分別名: IGW30N60H3FKSA1 IGW30N60H3XK SP000852242

安裝方式: 通孔

包裝盒: PG-TO-247-3

鈀功耗: 187 W

集電極-發射極-電壓-VCEO-Max: 600 V

集電極-發射極-飽和-電壓: 2.4 V

25-C 時的連續集電極電流: 60 A

柵極-發射極-漏電流: 100 nA

最大柵極發射極電壓: 20 V

連續集電極電流 Ic-Max: 30 A

Tags: IGW30N60H, IGW30N60, IGW30N6, IGW30N, IGW3, IGW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW30N60H3 描述

***Components: In a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247

***ical: Trans IGBT Chip N=-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube

***p One Stop Japan: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube

***et: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube

***ronik: IGBT 600V 60A 2.40V TO247-3

***i-Key: IGBT 600V 60A 187W TO247-3

***ark: Transistor, Igbt, 600V, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, IGBT, 600V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP™ Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: TRANSISTOR, IGBT, 600V, 60A, TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:187W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP™ Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

Market price

型號	製造商	描述	庫存	價格
IGW30N60H3FKSA1 DISTI # 24580267	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	189	7:$1.4517
IGW30N60H3 DISTI # 30577650	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 RoHS: Compliant	120	100:$2.5118 50:$2.7157 10:$3.3533 5:$5.2530
IGW30N60H3FKSA1 DISTI # 26197177	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	42	4:$1.7430
IGW30N60H3FKSA1 DISTI # V99:2348_06377101	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	42	1:$1.7430
IGW30N60H3FKSA1 DISTI # V36:1790_06377101	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	240:$1.5240
IGW30N60H3 DISTI # SP000852242	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube (Alt: SP000852242) Min Qty: 1 Container: Tube	Europe - 103
IGW30N60H3 DISTI # IGW30N60H3FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N60H3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0
IGW30N60H3 DISTI # IGW30N60H3	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Bulk (Alt: IGW30N60H3) Min Qty: 191 Container: Bulk	Americas - 0
IGW30N60H3FKSA1 DISTI # 13AC9001	Infineon Technologies AG	TRANSISTOR, IGBT, 600V, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:187W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes RoHS: Compliant	488	1:$1.3400 10:$1.3400 25:$1.3400 50:$1.3400 100:$1.3400 250:$1.3400 500:$1.3400
IGW30N60H3 DISTI # 726-IGW30N60H3	Infineon Technologies AG	IGBT Transistors 600V HI SPEED SW IGBT RoHS: Compliant	337	1:$3.4700 10:$2.9500 100:$2.5500 250:$2.4200 500:$2.1700
IGW30N60H3	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	20	1000:$1.7300 500:$1.8200 100:$1.8900 25:$1.9800 1:$2.1300
IGW30N60H3FKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	1680	1000:$1.4900 500:$1.5700 100:$1.6300 25:$1.7000 1:$1.8300
IGW30N60H3FKSA1 DISTI # 1107737	Infineon Technologies AG	In a Pack of 6, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, PK Min Qty: 6 Container: Package	240	6:$4.4440 12:$3.5230 60:$3.2870 120:$3.0500 300:$2.8860
IGW30N60H3FKSA1 DISTI # 1458592	Infineon Technologies AG	In a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, TU Min Qty: 30 Container: Tube	0	30:$3.5600
IGW30N60H3 DISTI # IGW30N60H3	Infineon Technologies AG	Transistor: IGBT,600V,30A,187W,TO247-3	144	100:$2.1300 25:$2.5200 5:$3.1600 1:$3.4300
IGW30N60H3 DISTI # IGW30N60H3	Infineon Technologies AG	Transistor: IGBT,600V,30A,187W,TO247-3	144	100:$2.1200 25:$2.5100 5:$3.1500 1:$3.4200
IGW30N60H3 DISTI # IGBT1229	Infineon Technologies AG	IGBT600V60A2.40VTO247-3 RoHS: Compliant	Stock DE - 6150Stock HK - 0Stock US - 0	30:$1.9700 60:$1.8500 90:$1.8300 150:$1.7900 240:$1.6800
IGW30N60H3FKSA1 DISTI # 2725780	Infineon Technologies AG	TRANSISTOR, IGBT, 600V, 60A, TO-247 RoHS: Compliant	482	1000:£2.1400 500:£2.1800 250:£2.2400 100:£2.2800 10:£2.3300 1:£2.3800
IGW30N60H3FKSA1 DISTI # 2725780	Infineon Technologies AG	TRANSISTOR, IGBT, 600V, 60A, TO-247 RoHS: Compliant	478	100:$2.9700 10:$3.5600 1:$3.7300

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