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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC018N04LSGATMA1 DISTI # V72:2272_06383456 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant | 25 |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC018N04LSGATMA1 DISTI # 30224883 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant | 25 |
|
| BSC018N04LS G DISTI # SP000388293 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON T/R (Alt: SP000388293) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC018N04LSGATMA1 DISTI # 60R2476 | Infineon Technologies AG | MOSFET, N CH, 100A, 40V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes | 900 |
|
| BSC018N04LS G DISTI # 726-BSC018N04LSG | Infineon Technologies AG | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 8413 |
|
| BSC018N04LSGXT DISTI # 726-BSC018N04LSGXT | Infineon Technologies AG | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 0 |
|
| BSC018N04LSG | Infineon Technologies AG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | 65 |
|
| BSC018N04LSG | Infineon Technologies AG | 3699 | ||
| BSC018N04LSGATMA1 DISTI # 1775426 | Infineon Technologies AG | MOSFET, N CH, 100A, 40V, PG-TDSON-8 RoHS: Compliant | 962 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
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Mfr.#: BSC018N04LSGXT OMO.#: OMO-BSC018N04LSGXT |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
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Mfr.#: BSC018N04LSGATMA1 OMO.#: OMO-BSC018N04LSGATMA1 |
MOSFET MV POWER MOS |
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Mfr.#: BSC018NE2LSATMA1 OMO.#: OMO-BSC018NE2LSATMA1 |
MOSFET LV POWER MOS |
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Mfr.#: BSC018N04LSG OMO.#: OMO-BSC018N04LSG-1190 |
30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET |
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Mfr.#: BSC018N04LSG-S OMO.#: OMO-BSC018N04LSG-S-1190 |
全新原裝 |
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Mfr.#: BSC018N04LSGATMA1 , TDA3 |
全新原裝 |
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Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI-1190 |
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC018NE2LSI BSC018NE2LS |
全新原裝 |
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Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS-317 |
RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
