RGT40NS65DGC9

RGT40NS65DGC9
Mfr. #:
RGT40NS65DGC9
製造商:
Rohm Semiconductor
描述:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
生命週期:
製造商新產品
數據表:
RGT40NS65DGC9 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
RGT40NS65DGC9 更多信息
產品屬性
屬性值
製造商:
羅姆半導體
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-262-3
安裝方式:
通孔
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
650 V
集電極-發射極飽和電壓:
1.65 V
最大柵極發射極電壓:
30 V
25 C 時的連續集電極電流:
40 A
Pd - 功耗:
161 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 175 C
打包:
管子
品牌:
羅姆半導體
柵極-發射極漏電流:
200 nA
產品類別:
IGBT晶體管
出廠包裝數量:
50
子類別:
IGBT
第 # 部分別名:
RGT40NS65D(TO-262)
Tags
RGT40N, RGT4, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
***ical
Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 40A 161000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 40A, 175Deg C, 161W; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, 175DEG C, 161W; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 40A, 175°C, 161W; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:161W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
型號 製造商 描述 庫存 價格
RGT40NS65DGC9
DISTI # RGT40NS65DGC9-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 3000:$1.3734
  • 1000:$1.4224
  • 100:$2.0895
  • 25:$2.4524
  • 10:$2.6000
  • 1:$2.8900
RGT40NS65DGC9
DISTI # 755-RGT40NS65DGC9
ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
1000
  • 1:$2.8800
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
RGT40NS65DGC9ROHM Semiconductor 40
  • 33:$2.1600
  • 10:$2.3760
  • 1:$3.2400
RGT40NS65DGC9ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
Americas -
    RGT40NS65DGC9ROHM SemiconductorRoHS(ship within 1day)50
    • 1:$3.0000
    • 10:$2.2500
    • 50:$1.5000
    • 100:$1.2000
    • 500:$1.1200
    • 1000:$1.0800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W
    RoHS: Compliant
    0
    • 1000:$1.8000
    • 500:$2.1100
    • 250:$2.2700
    • 100:$2.3900
    • 10:$2.7900
    • 1:$3.6800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W0
    • 500:£1.2100
    • 250:£1.3000
    • 100:£1.3700
    • 10:£1.6000
    • 1:£2.1100
    圖片 型號 描述
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL

    IGBT Transistors 650V 20A IGBT Stop Trench
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL

    IGBT Transistors FIELD STOP TRENCH IGBT
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL-ROHM-SEMI

    IGBT Transistors 650V 20A Field Stop Trench IGBT
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL-1190

    FIELD STOP TRENCH IGBT
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9-1190

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    可用性
    庫存:
    Available
    訂購:
    1984
    輸入數量:
    RGT40NS65DGC9的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$2.88
    US$2.88
    10
    US$2.45
    US$24.50
    100
    US$1.96
    US$196.00
    500
    US$1.71
    US$855.00
    1000
    US$1.42
    US$1 420.00
    2500
    US$1.32
    US$3 300.00
    5000
    US$1.27
    US$6 350.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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