IPB60R099C7ATMA1

IPB60R099C7ATMA1
Mfr. #:
IPB60R099C7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPB60R099C7ATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
22 A
Rds On - 漏源電阻:
99 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
42 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
110 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
捲軸
高度:
4.4 mm
長度:
10 mm
系列:
CoolMOS C7
寬度:
9.25 mm
品牌:
英飛凌科技
秋季時間:
4.5 ns
產品類別:
MOSFET
上升時間:
8 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
54 ns
典型的開啟延遲時間:
11.8 ns
第 # 部分別名:
IPB60R099C7 SP001297998
單位重量:
0.139332 oz
Tags
IPB60R099C, IPB60R099, IPB60R09, IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N-CH, 650V, 150DEG C, 110W ROHS COMPLIANT: YES
***ineon SCT
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO263-3, RoHS
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
型號 製造商 描述 庫存 價格
IPB60R099C7ATMA1
DISTI # 32680826
Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK1000
  • 1000:$2.4693
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
890In Stock
  • 500:$3.5396
  • 100:$4.1580
  • 10:$5.0750
  • 1:$5.6500
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
890In Stock
  • 500:$3.5396
  • 100:$4.1580
  • 10:$5.0750
  • 1:$5.6500
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$2.7533
  • 1000:$2.8982
IPB60R099C7ATMA1
DISTI # V36:1790_13989137
Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4990
  • 10000:$2.8340
  • 1000:$2.8900
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R099C7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 6000:$2.3900
  • 10000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
IPB60R099C7ATMA1
DISTI # SP001297998
Infineon Technologies AGMOSFET HIGH POWER_NEW (Alt: SP001297998)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.4900
  • 2000:€2.5900
  • 1000:€2.6900
IPB60R099C7ATMA1
DISTI # 726-IPB60R099C7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
983
  • 1:$5.2100
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
  • 1000:$2.7600
  • 2000:$2.6200
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IPB60R120P7ATMA1

Mfr.#: IPB60R120P7ATMA1

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Mfr.#: STPSC12065GY-TR

OMO.#: OMO-STPSC12065GY-TR

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OMO.#: OMO-FFSH1665A

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Mfr.#: CRCW04020000Z0EDC

OMO.#: OMO-CRCW04020000Z0EDC

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Mfr.#: C0402C104M4RACAUTO

OMO.#: OMO-C0402C104M4RACAUTO

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06035C473KAT2A

Mfr.#: 06035C473KAT2A

OMO.#: OMO-06035C473KAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.047uF 10% X7R
STPSC12065GY-TR

Mfr.#: STPSC12065GY-TR

OMO.#: OMO-STPSC12065GY-TR-STMICROELECTRONICS

DIODES AND RECTIFIERS
IPB60R120P7ATMA1

Mfr.#: IPB60R120P7ATMA1

OMO.#: OMO-IPB60R120P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH TO263-3
可用性
庫存:
963
訂購:
2946
輸入數量:
IPB60R099C7ATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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