TGF2018

TGF2018
Mfr. #:
TGF2018
製造商:
Qorvo
描述:
RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
生命週期:
製造商新產品
數據表:
TGF2018 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
TGF2018 更多信息
產品屬性
屬性值
製造商
TriQuint (Qorvo)
產品分類
晶體管 - FET、MOSFET - 單
系列
轉化生長因子
打包
凝膠包
部分別名
1098412
安裝方式
貼片/貼片
工作溫度範圍
- 65 C to + 150 C
技術
砷化鎵
配置
單身的
晶體管型
pHEMT
獲得
14 dB
鈀功耗
0.64 W
最高工作溫度
+ 150 C
最低工作溫度
- 65 C
工作頻率
20 GHz
Id 連續漏極電流
58 mA
Vds-漏-源-擊穿電壓
8 V
正向跨導最小值
70 mS
VGS-柵極-源極擊穿電壓
- 15 V
最大漏柵電壓
12 V
NF-噪聲係數
1 dB
P1dB-壓縮點
22 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2018/25 Heterojunction Power FETs
Qorvo TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB  and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
型號 製造商 描述 庫存 價格
TGF2018
DISTI # 772-TGF2018
QorvoRF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
RoHS: Compliant
200
  • 100:$5.8300
  • 300:$5.4500
  • 500:$5.0900
  • 1000:$4.7600
圖片 型號 描述
TGF10-07870787-039

Mfr.#: TGF10-07870787-039

OMO.#: OMO-TGF10-07870787-039

Thermal Interface Products 1W/m-K 200*200*1 TGF10 White Gray
TGF20-07870787-020

Mfr.#: TGF20-07870787-020

OMO.#: OMO-TGF20-07870787-020

Thermal Interface Products 2W/m-K 200*200*0.5 TGF20 Light Blue
TGF2978-SM

Mfr.#: TGF2978-SM

OMO.#: OMO-TGF2978-SM-318

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
TGF2040

Mfr.#: TGF2040

OMO.#: OMO-TGF2040-318

RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
TGF2060

Mfr.#: TGF2060

OMO.#: OMO-TGF2060-318

RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957-318

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2021-12-XCC-2

Mfr.#: TGF2021-12-XCC-2

OMO.#: OMO-TGF2021-12-XCC-2-1190

全新原裝
TGF2023-02

Mfr.#: TGF2023-02

OMO.#: OMO-TGF2023-02-1152

RF JFET Transistors 2.5mm GaN Discrete
TGF4042

Mfr.#: TGF4042

OMO.#: OMO-TGF4042-1190

ARBITRARY/FUNCTION/PULSE GEN, 2CH, 40MHZ
可用性
庫存:
Available
訂購:
3000
輸入數量:
TGF2018的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$7.14
US$7.14
10
US$6.78
US$67.83
100
US$6.43
US$642.60
500
US$6.07
US$3 034.50
1000
US$5.71
US$5 712.00
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