BSG0810ND

BSG0810ND
Mfr. #:
BSG0810ND
製造商:
INFINEON
描述:
生命週期:
製造商新產品
數據表:
BSG0810ND 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商
英飛凌
產品分類
FET - 陣列
系列
優化MOS
打包
捲帶 (TR)
部分別名
BSG0810NDI SP001241674
包裝盒
8-PowerTDFN
技術
工作溫度
-55°C ~ 155°C (TJ)
安裝型
表面貼裝
供應商-設備-包
PG-TISON-8
FET型
2 N-Channel (Dual) Asymmetrical
最大功率
2.5W
漏源電壓 Vdss
25V
輸入電容-Ciss-Vds
*
FET-Feature
Logic Level Gate, 4.5V Drive
Current-Continuous-Drain-Id-25°C
19A, 39A
Rds-On-Max-Id-Vgs
3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2V @ 250μA
柵極電荷-Qg-Vgs
8.4nC @ 4.5V
Tags
BSG0810, BSG08, BSG0, BSG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型號 製造商 描述 庫存 價格
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1-ND
Infineon Technologies AGMOSFET 2N-CH 25V 19A/39A 8TISON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.1211
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0810NDIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.1289
  • 10000:$1.0879
  • 20000:$1.0489
  • 30000:$1.0139
  • 50000:$0.9959
BSG0810NDIATMA1
DISTI # BSG0810NDI
Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R (Alt: BSG0810NDI)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
  • 5000:$1.1200
  • 10000:$1.0889
  • 15000:$1.0595
  • 25000:$1.0316
  • 50000:$1.0182
  • 125000:$1.0051
  • 250000:$0.9924
BSG0810NDIATMA1
DISTI # 726-BSG0810NDIATMA1
Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant
4695
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3800
  • 1000:$1.1400
  • 2500:$1.0600
  • 5000:$1.0200
圖片 型號 描述
BSG0811ND

Mfr.#: BSG0811ND

OMO.#: OMO-BSG0811ND

MOSFET DIFFERENTIATED MOSFETS
BSG0813NDIATMA1

Mfr.#: BSG0813NDIATMA1

OMO.#: OMO-BSG0813NDIATMA1

MOSFET LV POWER MOS
BSG0073

Mfr.#: BSG0073

OMO.#: OMO-BSG0073-1190

全新原裝
BSG0095

Mfr.#: BSG0095

OMO.#: OMO-BSG0095-1190

全新原裝
BSG0810ND

Mfr.#: BSG0810ND

OMO.#: OMO-BSG0810ND-1190

全新原裝
BSG0810NDI

Mfr.#: BSG0810NDI

OMO.#: OMO-BSG0810NDI-1190

全新原裝
BSG0810NDIATMA1

Mfr.#: BSG0810NDIATMA1

OMO.#: OMO-BSG0810NDIATMA1-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 25V 19A/39A 8TISON
BSG0811ND

Mfr.#: BSG0811ND

OMO.#: OMO-BSG0811ND-1190

MOSFET DIFFERENTIATED MOSFETS
BSG0811NDI

Mfr.#: BSG0811NDI

OMO.#: OMO-BSG0811NDI-1190

全新原裝
BSG0813NDIATMA1INFINEON-

Mfr.#: BSG0813NDIATMA1INFINEON-

OMO.#: OMO-BSG0813NDIATMA1INFINEON--1190

全新原裝
可用性
庫存:
Available
訂購:
3500
輸入數量:
BSG0810ND的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
從...開始
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