FDC6401N

FDC6401N vs FDC6401N-NL vs FDC6401N-CUT TAPE

 
PartNumberFDC6401NFDC6401N-NLFDC6401N-CUT TAPE
DescriptionMOSFET Dual N-Ch 2.5V Spec Power Trench
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance70 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation960 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC6401N--
Transistor Type2 N-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesFDC6401N_NL--
Unit Weight0.001270 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC6401N MOSFET Dual N-Ch 2.5V Spec Power Trench
ON Semiconductor
ON Semiconductor
FDC6401N MOSFET 2N-CH 20V 3A SSOT-6
FDC6401N-NL 全新原裝
FDC6401N-CUT TAPE 全新原裝
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