FDMS3660S

FDMS3660S vs FDMS3660S 22CF vs FDMS3660S-1

 
PartNumberFDMS3660SFDMS3660S 22CFFDMS3660S-1
DescriptionMOSFET PowerStage Dual N-Ch PowerTrench MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePower-56-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current13 A, 30 A--
Rds On Drain Source Resistance8 mOhms, 1.8 mOhms--
Vgs Gate Source Voltage20 V, 12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.2 W, 2.5 W--
ConfigurationDual--
TradenamePower Stage PowerTrench--
PackagingReel--
Height1.1 mm--
Length6 mm--
SeriesFDMS3660S--
Transistor Type2 N-Channel--
Width5 mm--
BrandON Semiconductor / Fairchild--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.006032 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMS3660S MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
ON Semiconductor
ON Semiconductor
FDMS3660S MOSFET 2N-CH 30V 13A/30A 8-PQFN
FDMS3660S-F121 MOSFET 2N-CH 30V 13A/30A 8-PQFN
FDMS3660S 22CF 全新原裝
FDMS3660S-1 全新原裝
FDMS3660S_F121 MOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET
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