FZ900R12

FZ900R12KE4 vs FZ900R12KE4HOSA1 vs FZ900R12KF5NOSA1

 
PartNumberFZ900R12KE4FZ900R12KE4HOSA1FZ900R12KF5NOSA1
DescriptionIGBT Modules 1200V 900AIGBT MODULE 1200V 900APOWER MOD IGBT 1200V A-IHM130-2
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.1 V--
Continuous Collector Current at 25 C900 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation4300 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFZ900R12KE4HOSA1 SP000524466--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FZ900R12KE4 IGBT Modules 1200V 900A
FZ900R12KP4 IGBT Modules IGBT 1200V 900A
FZ900R12KE4HOSA1 IGBT MODULE 1200V 900A
FZ900R12KP4HOSA1 MOD IGBT MED PWR 62MM-2
FZ900R12KF5NOSA1 POWER MOD IGBT 1200V A-IHM130-2
FZ900R12KP4 IGBT Modules IGBT 1200V 900A
FZ900R12KE4 IGBT Modules 1200V 900A
FZ900R12KE3 全新原裝
FZ900R12KF1 全新原裝
FZ900R12KF3 全新原裝
FZ900R12KF4 全新原裝
FZ900R12KF5 IGBT Modules
FZ900R12KF6 全新原裝
FZ900R12KL4 全新原裝
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