FZ900R12KE4HOSA1

Mfr. #:: FZ900R12KE4HOSA1
製造商:: Infineon Technologies
描述:: IGBT MODULE 1200V 900A
生命週期:: 製造商新產品
數據表:: FZ900R12KE4HOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FZ900R12KE, FZ900R12, FZ900R, FZ900, FZ90, FZ9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ900R12KE4HOSA1 描述

***ow.cn: Trans IGBT Module N-CH 1200V 900A 4300000mW Automotive 4-Pin 62MM-2 Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 900A; Transistor Polarity:n Channel; Dc Collector Current:900A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.3Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***et Europe: Trans IGBT Module N-CH 1.2kV 150A nom 1250W 7-Pin 106.4x61.4mm

***ronik: IGBT-Mod. 150A 1200V 2,5kV 62mm

***trelec: IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 17 mJ Energy dissipation during turn-off time: 18 mJ

***th Star Micro: Trans IGBT Module N-CH 600V 300A 8-Pin PM-IA

***i-Key: IGBT MOLDING 600V 300A 7PM-IA

***i-Key Marketplace: IGBT, 300A, 600V, N-CHANNEL

***omponent: Fairchild Semiconductor power module

***ser: IGBTs Molding Type Module

***el Electronic: IC REG LINEAR 1.2V 1A 8HSON

***ter Electronics: 600V 300A MODULE

***el Nordic: Contact for details

*** Electronics: Trans IGBT Module N-CH 600V 400A 8-Pin PM-IA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***omponent: Fairchild Semiconductor power module

***et: Trans IGBT Module N-CH 600V 65A 12-Pin Case SP1

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel

***i-Key: IGBT NPT BRIDGE 600V 65A SP1

***el Electronic: IGBT MODULE 600V 65A 250W SP1

Market price

型號	製造商	描述	庫存	價格
FZ900R12KE4HOSA1 DISTI # V99:2348_18194958	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 900A 4300000mW 4-Pin Tray RoHS: Compliant	10	1:$154.9700
FZ900R12KE4HOSA1 DISTI # FZ900R12KE4HOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 900A RoHS: Compliant Min Qty: 1 Container: Bulk	58In Stock	1:$155.1700
FZ900R12KE4HOSA1 DISTI # 33595702	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 900A 4300000mW 4-Pin Tray RoHS: Compliant	10	1:$154.9700
FZ900R12KE4HOSA1 DISTI # FZ900R12KE4HOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FZ900R12KE4HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0
FZ900R12KE4 DISTI # 641-FZ900R12KE4	Infineon Technologies AG	IGBT Modules 1200V 900A RoHS: Compliant	115	1:$158.4300 5:$154.6200 10:$150.7800 25:$148.6700
FZ900R12KE4HOSA1 DISTI # 2709939	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 900A	0	10:£117.0000 5:£120.0000 1:£122.0000
FZ900R12KE4HOSA1 DISTI # 2709939	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 900A RoHS: Compliant	0	1:$236.7800
FZ900R12KE4HOSA1 DISTI # XSKDRABV0052020	Infineon Technologies AG	RoHS: Compliant	12 in Stock0 on Order	12:$195.4300 10:$209.3900

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