 |  |  | |
| PartNumber | FZ900R12KE4 | FZ900R12KE3 | FZ900R12KE4HOSA1 |
| Description | IGBT Modules 1200V 900A | IGBT MODULE 1200V 900A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | - | - |
| Continuous Collector Current at 25 C | 900 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 4300 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FZ900R12KE4HOSA1 SP000524466 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FZ900R12KE4 | IGBT Modules 1200V 900A | |
| FZ900R12KE4HOSA1 | IGBT MODULE 1200V 900A | ||
| FZ900R12KE4 | IGBT Modules 1200V 900A | ||
| FZ900R12KE3 | 全新原裝 |