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| PartNumber | IGT40R070D1E8220ATMA1 | IGT60R070D1ATMA1 | IGT60R190D1SATMA1 |
| Description | Bipolar Transistors - BJT | MOSFET 600V CoolGaN Power Transistor | MOSFET 600V CoolGaN Power Transistor |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Part # Aliases | E8220 IGT40R070D1 SP001946158 | SP001300364 | SP001701702 |
| Technology | - | GaN | GaN |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | PG-HSOF-8 | PG-HSOF-8 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
| Id Continuous Drain Current | - | 31 A | 12.5 A |
| Rds On Drain Source Resistance | - | 70 mOhms | 190 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 0.9 V | 0.9 V |
| Vgs Gate Source Voltage | - | 10 V | 10 V |
| Qg Gate Charge | - | 5.8 nC | 3.2 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 125 W | 55.5 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | CoolGaN | CoolGaN |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 13 ns | 12 ns |
| Rise Time | - | 8 ns | 5 ns |
| Typical Turn Off Delay Time | - | 13 ns | 12 ns |
| Typical Turn On Delay Time | - | 12 ns | 11 ns |
