IGT60R070D1ATMA1

Mfr. #:: IGT60R070D1ATMA1
製造商:: Infineon Technologies
描述:: MOSFET 600V CoolGaN Power Transistor
生命週期:: 製造商新產品
數據表:: IGT60R070D1ATMA1 數據表
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ECAD Model:
更多信息:: IGT60R070D1ATMA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 氮化鎵

安裝方式：: 貼片/貼片

包裝/案例：: PG-HSOF-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 31 A

Rds On - 漏源電阻：: 70 mOhms

Vgs th - 柵源閾值電壓：: 0.9 V

Vgs - 柵源電壓：: 10 V

Qg - 門電荷：: 5.8 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 125 W

配置：: 單身的

頻道模式：: 增強

商品名：: 冷卻氮化鎵

打包：: 捲軸

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

秋季時間：: 13 ns

產品類別：: MOSFET

上升時間：: 8 ns

出廠包裝數量：: 2000

子類別：: MOSFET

典型關斷延遲時間：: 13 ns

典型的開啟延遲時間：: 12 ns

第 # 部分別名：: SP001300364

Tags: IGT60, IGT6, IGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGT60R070D1ATMA1 更多信息

CoolGaN™ Gallium Nitride HEMTs: Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.

Market price

型號	製造商	描述	庫存	價格
IGT60R070D1ATMA1 DISTI # V72:2272_22710692	Infineon Technologies AG	IGT60R070D1ATMA1	3961	3000:$15.3900 1000:$15.4000 250:$15.4100 100:$15.4200 25:$19.6300 10:$20.0500 1:$22.0400
IGT60R070D1ATMA1 DISTI # V36:1790_22710692	Infineon Technologies AG	IGT60R070D1ATMA1	0	1000000:$13.4800 200000:$14.0500 20000:$15.1900 2000:$15.3900
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1CT-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8HSOF RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	609In Stock	500:$17.2689 100:$19.0208 10:$22.2740 1:$24.1500
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1DKR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8HSOF RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	609In Stock	500:$17.2689 100:$19.0208 10:$22.2740 1:$24.1500
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1TR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8HSOF RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$15.3890
IGT60R070D1ATMA1 DISTI # 32361397	Infineon Technologies AG	IGT60R070D1ATMA1	3961	3000:$15.3900 1000:$15.4000 250:$15.4100 100:$15.4200 25:$19.6300 10:$20.0500 1:$22.0400
IGT60R070D1ATMA1 DISTI # SP001300364	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 8-Pin HSOF (Alt: SP001300364) RoHS: Compliant Min Qty: 2000	Europe - 100	20000:€12.7900 12000:€13.6900 8000:€14.7900 4000:€15.3900 2000:€15.9900
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 8-Pin HSOF - Tape and Reel (Alt: IGT60R070D1ATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$14.6900 12000:$14.8900 8000:$15.3900 4000:$15.9900 2000:$16.5900
IGT60R070D1ATMA1 DISTI # 84AC1771	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes	1992	1000:$14.0300 500:$16.1300 250:$16.9500 100:$17.7700 50:$18.8200 25:$19.8800 10:$20.8100 1:$22.5500
IGT60R070D1ATMA1 DISTI # 726-IGT60R070D1ATMA1	Infineon Technologies AG	MOSFET 600V CoolGaN Power Transistor RoHS: Compliant	2160	1:$22.3300 5:$22.1000 10:$20.6000 25:$19.6800 100:$17.5900 250:$16.7800 500:$15.9700 1000:$13.8900
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1	Infineon Technologies AG	Transistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W	5	10:$22.5500 3:$25.5900 1:$28.4100
IGT60R070D1ATMA1 DISTI # 2981532	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W RoHS: Compliant	1992	2000:$23.1500 500:$25.6600 100:$26.5000 50:$28.9100 1:$31.8100 10:$31.8100
IGT60R070D1ATMA1 DISTI # 2981532	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W	1974	100:£13.6900 50:£14.5100 10:£15.3200 5:£17.2000 1:£17.3800
IGT60R070D1ATMA1 DISTI # XSKDRABV0044851	Infineon Technologies AG	DFlip-Flop,4000/14000/40000Series,2-Func,PositiveEdgeTriggered,1-Bit,ComplementaryOutput, CMOS,PDSO14 RoHS: Compliant	80 in Stock0 on Order	80:$20.2700 33:$21.7200

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