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| PartNumber | IPI041N12N3 G | IPI041N12N3 | IPI041N12N3G |
| Description | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 211 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Tube | - | Tube |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | OptiMOS 3 | - | XPI041N12 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 83 S | - | - |
| Fall Time | 21 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 52 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | IPI041N12N3GAKSA1 IPI41N12N3GXK SP000652748 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Part Aliases | - | - | G IPI041N12N3 IPI041N12N3GXK SP000652748 |
| Package Case | - | - | TO-262-3 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI041N12N3 G | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | |
| IPI041N12N3GAKSA1 | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | ||
| IPI041N12N3GAKSA1 | MOSFET N-CH 120V 120A TO262-3 | ||
| IPI041N12N3 | 全新原裝 | ||
| IPI041N12N3G | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |