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| PartNumber | IPT60R102G7XTMA1 | IPT60R125G7XTMA1 | IPT60R150G7XTMA1 |
| Description | MOSFET HIGH POWER NEW | MOSFET HIGH POWER NEW | MOSFET HIGH POWER NEW |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | HSOF-8 | HSOF-8 | HSOF-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 23 A | 20 A | 17 A |
| Rds On Drain Source Resistance | 88 mOhms | 108 mOhms | 129 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 34 nC | 27 nC | 23 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 141 W | 120 W | 106 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | CoolMOS G7 | CoolMOS G7 | CoolMOS G7 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 4 ns | 5 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 5 ns | 5 ns |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 60 ns | 56 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 17 ns |
| Part # Aliases | IPT60R102G7 SP001579318 | IPT60R125G7 SP001579334 | IPT60R150G7 SP001579346 |
