IRF640NSTR

IRF640NSTRLPBF vs IRF640NSTRRPBF

 
PartNumberIRF640NSTRLPBFIRF640NSTRRPBF
DescriptionMOSFET MOSFT 200V 18A 150mOhm 44.7nCMOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263AB-3D2PAK-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V
Id Continuous Drain Current18 A18 A
Rds On Drain Source Resistance150 mOhms150 mOhms
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge44.7 nC44.7 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation150 W150 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min6.8 S6.8 S
Fall Time5.5 ns5.5 ns
Product TypeMOSFETMOSFET
Rise Time19 ns19 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time23 ns23 ns
Typical Turn On Delay Time10 ns10 ns
Part # AliasesSP001561810SP001561802
Unit Weight0.070548 oz0.139332 oz
Vgs th Gate Source Threshold Voltage-4 V
Type-HEXFET Power MOSFET
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF640NSTRLPBF MOSFET MOSFT 200V 18A 150mOhm 44.7nC
IRF640NSTRLPBF MOSFET N-CH 200V 18A D2PAK
IRF640NSTRRPBF Darlington Transistors MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
Infineon / IR
Infineon / IR
IRF640NSTRRPBF MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
IRF640NSTRLPBF-CUT TAPE 全新原裝
IRF640NSTRRPBF-CUT TAPE 全新原裝
IRF640NSTR + 全新原裝
IRF640NSTRLPBF STB19NF 全新原裝
IRF640NSTRLPBF,IRF640NS, 全新原裝
IRF640NSTRLPBF,IRF640NST 全新原裝
IRF640NSTRLPBF,IRF640STR 全新原裝
IRF640NSTRL HEXFET N-CH MOSFET 18A 200V D2PAK, PK
IRF640NSTRPBF 全新原裝
IRF640NSTRR 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
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