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| PartNumber | PSMN8R5-100ESQ | PSMN8R5-100ESFQ | PSMN8R5-100PSFQ |
| Description | MOSFET PSMN8R5-100ES/I2PAK/STANDARD M | MOSFET PSMN8R5-100ESF SOT226/I2PAK | MOSFET PSMN8R5-100PSF SOT78/SIL3P |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | I2PAK-3 | TO-220-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 100 A | 97 A | 98 A |
| Rds On Drain Source Resistance | 22.6 mOhms | 8.8 mOhms | 8.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | 2 V |
| Qg Gate Charge | 111 nC | 44.5 nC | 44.5 nC |
| Pd Power Dissipation | 263 W | 183 W | 183 W |
| Packaging | Tube | Tube | Tube |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 43 ns | 23.6 ns | 23.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 26.8 ns | 26.8 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 87 ns | 31.5 ns | 31.5 ns |
| Typical Turn On Delay Time | 20 ns | 16.8 ns | 16.8 ns |
| Unit Weight | 0.084199 oz | - | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN8R5-100ESQ | MOSFET PSMN8R5-100ES/I2PAK/STANDARD M | |
| PSMN8R5-60YS,115 | MOSFET N-CHANNEL 60V STD LEVEL MOSFET | ||
| PSMN8R5-100PSQ | MOSFET PSMN8R5-100PS/SIL3P/STANDARD M | ||
| PSMN8R5-100ESFQ | MOSFET PSMN8R5-100ESF SOT226/I2PAK | ||
| PSMN8R5-100PSFQ | MOSFET PSMN8R5-100PSF SOT78/SIL3P | ||
| PSMN8R5-100XSQ | MOSFET PSMN8R5-100XS/TO-220F/STANDARD | ||
| PSMN8R5-100ESQ | IGBT Transistors MOSFET PSMN8R5-100ES/I2PAK/RAILH | ||
| PSMN8R5-100PSQ | IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH | ||
| PSMN8R5-100ESFQ | MOSFET N-CHANNEL 100V 97A I2PAK | ||
| PSMN8R5-100PSFQ | MOSFET N-CH 100V 98A TO220AB | ||
| PSMN8R5-60YS,115 | MOSFET N-CH 60V 76A LFPAK | ||
| PSMN8R5-100ES | 全新原裝 | ||
| PSMN8R5-100PS | 全新原裝 | ||
| PSMN8R5-100PS127 | - Bulk (Alt: PSMN8R5-100PS127) | ||
| PSMN8R5-100XS | 全新原裝 | ||
| PSMN8R5-60YS | 全新原裝 | ||
| PSMN8R5-60YS RJK0655DP | 全新原裝 | ||
| PSMN8R5-108ES | Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet | ||
| PSMN8R5-108ES127 | Now Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| PSMN8R5-108ESQ127 | Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
NXP Semiconductors |
PSMN8R5-108ESQ | MOSFET N-CH 108V 100A I2PAK | |
| PSMN8R5-100XSQ | IGBT Transistors MOSFET PSMN8R5-100XS/TO-220F/RAILH |