TK31J

TK31J60W,S1VQ vs TK31J60W vs TK31J60W,S1VQ(O

 
PartNumberTK31J60W,S1VQTK31J60WTK31J60W,S1VQ(O
DescriptionMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
ManufacturerToshiba-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30.8 A--
Rds On Drain Source Resistance88 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge105 nC--
Pd Power Dissipation230 W--
ConfigurationSingle--
TradenameDTMOSIV--
Height20 mm--
Length15.5 mm--
SeriesTK31J60W--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity25--
SubcategoryMOSFETs--
Unit Weight0.245577 oz--
製造商 型號 描述 RFQ
Toshiba
Toshiba
TK31J60W,S1VQ MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
TK31J60W5,S1VQ MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
TK31J60W5,S1VQ Darlington Transistors MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
TK31J60W,S1VQ Darlington Transistors MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
TK31J60W5S1VQ MOSFET N-CH 30.8A 230W FET 600V
TK31J60W5S1VQO 全新原裝
TK31J60W,S1VQ(O) MOSFETs
TK31J60W 全新原裝
TK31J60W,S1VQ(O 全新原裝
TK31J60W5 全新原裝
TK31J60W5,S1VQ(O) 全新原裝
TK31J60W5S1VQ(O 全新原裝
TK31J60WS1VQ Trans MOSFET N 600V 30.8A 3-Pin SC-65 Tube - Rail/Tube (Alt: TK31J60W,S1VQ)
TK31J60WS1VQ(O 全新原裝
TK31J60W5S1VQ-ND 全新原裝
TK31J60WS1VQ-ND 全新原裝
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