| PartNumber | TK31J60W,S1VQ | TK31J60W5,S1VQ |
| Description | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC |
| Manufacturer | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-3PN-3 | TO-3PN-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 30.8 A | 30.8 A |
| Rds On Drain Source Resistance | 88 mOhms | 73 mOhms |
| Vgs Gate Source Voltage | 10 V | 30 V |
| Qg Gate Charge | 105 nC | 86 nC |
| Pd Power Dissipation | 230 W | 230 W |
| Configuration | Single | Single |
| Tradename | DTMOSIV | DTMOSIV |
| Height | 20 mm | 20 mm |
| Length | 15.5 mm | 15.5 mm |
| Series | TK31J60W | TK31J60W5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.245577 oz | 0.245577 oz |
| Vgs th Gate Source Threshold Voltage | - | 3.7 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Fall Time | - | 8.5 ns |
| Rise Time | - | 32 ns |
| Typical Turn Off Delay Time | - | 165 ns |
| Typical Turn On Delay Time | - | 70 ns |