6th Generation S-Series IGBTs

By Powerex Inc 221

6th Generation S-Series IGBTs

Powerex's dual IGBT modules are designed for use in switching applications. Each module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse-connected, super-fast recovery, free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

The 6th generation S-Series IGBTs are improved versions of the earlier 5th generation A-Series and NF-Series IGBTs in compatible packages. They use 6th generation Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) silicon for significant performance improvement.

6th Generation Silicon Features
  • Tjmax = 175 °C – higher operating temperature
  • 40% reduction in gate drive current – reduced gate driver requirements
  • 20% reduction in Vcesat
  • 25% reduction in turn off losses
  • 20% reduction in FWD forward voltage (Vf)
  • ~20% reduction in overall losses
  • Industrial inverters
  • UPS systems
  • Motor drives
  • Fuel cell inverters
  • Wind inverters
  • Solar inverters