FDB33N25TM is a power MOSFET,an N-channel metal oxide semiconductor field effect transistor.Such devices are commonly used in power electronics applications such as switching power supplies, motor drivers, power inverters, etc.

FDB33N25TM has low on-resistance, high switching speed and good withstand voltage characteristics, and is suitable for power supply and drive circuit designs that require high efficiency and performance.

Ⅰ.Specification parameters of FDB33N25TM

•Number of pins:3
•Technology:Si
•Configuration:Single
•Product type:MOSFET
•Installation style:SMD/SMT
•Number of channels:1 Channel
•Transistor polarity:N-Channel
•Qg-gate charge:48 nC
•Minimum operating temperature:-55℃
•Maximum operating temperature:+150℃
•Pd-Power dissipation:235 W
•Channel mode:Enhancement
•Id-continuous drain current:33 A
•Height:4.83 mm
•Length:10.67 mm
•Width:9.65 mm
•Fall time:120 ns
•Rise time:230 ns
•Product type:MOSFET
•Vgs (maximum value):±30V
•Qg-gate charge:48 nC
•Transistor type:1 N-Channel
•Typical shutdown delay time:75 ns
•Typical turn-on delay time:35 ns
•Channel mode:Enhancement
•Current at 25°C-Continuous Drain (Id):33A (Tc)
•Drive voltage (maximum Rds On, minimum Rds On):10V

 

Ⅱ.Features of FDB33N25TM

1.High reliability: As a product of ON Semiconductor, FDB33N25TM has high reliability and can operate stably in various environments. The manufacturer's strict quality control and continuous technological innovation guarantee product quality and performance.

2.High withstand voltage capability: This MOSFET can withstand high withstand voltage and is suitable for high voltage applications to ensure the stability and reliability of the system.

3.Suitable for high-frequency applications: It has excellent high-frequency characteristics and is suitable for high-frequency switching power supplies and other applications that require fast response.

4.Low on-resistance: The on-resistance of FDB33N25TM is 0.05Ω, which means that in the on-state, it can pass current with lower power consumption. Low on-resistance helps reduce energy loss and improve circuit efficiency.

5.Good thermal characteristics: Effective packaging and heat dissipation design can effectively dissipate the heat generated inside the device and keep the device within a safe operating temperature range.

6.Wide range of applications: FDB33N25TM is suitable for a variety of applications, including power switches, motor drives, lighting controls, power tools, and electronic transformers. Its high-performance characteristics allow it to perform well in various application scenarios.

7.Low input and output capacitance: Having lower input and output capacitance is beneficial to reducing the charge coupling effect during the switching process and improving high-frequency response and stability.

8.High current and high voltage capability: FDB33N25TM can withstand a continuous drain current of up to 33A and a maximum operating voltage of 250V. This capability makes it ideal for high current, high voltage applications.

9.Fast switching speed: The switching speed of this transistor reaches 25ns, which helps reduce switching losses and improve overall circuit efficiency. The fast switching speed allows the FDB33N25TM to quickly respond to changes in the circuit and ensure stable operation of the system.

Ⅲ.Methods to evaluate the heat dissipation performance of FDB33N25TM

1.Check the data sheet: First, you should check the data sheet of FDB33N25TM in detail. Data sheets typically provide information on thermal resistance (RθJA), maximum junction temperature (Tj), and recommended heat sinks. These parameters are critical to understanding the thermal behavior of transistors.

2.Thermal simulation: For complex applications or high-power situations, thermal simulation may be required to more accurately evaluate thermal performance. Thermal simulation software can be used to predict the temperature distribution and heat dissipation effects of transistors under different conditions, thereby helping to optimize thermal design.

3.Junction temperature estimation: Junction temperature (Tj) is the temperature of the PN junction inside the transistor. Excessively high junction temperatures may cause transistor performance degradation or damage. The junction temperature can be estimated by measuring the ambient temperature, transistor power dissipation, and RθJA. Make sure the junction temperature is below the maximum allowed value given in the data sheet.

4.Calculate thermal resistance: Thermal resistance (RθJA) is an important indicator for evaluating heat dissipation performance. It represents the thermal resistance of a transistor from junction temperature to ambient temperature. The heat dissipation capability of a transistor under different conditions can be estimated by the RθJA value given in the data sheet.

5.Heat sink selection: In order to improve heat dissipation performance, it is usually necessary to install a heat sink on the transistor. Selecting the appropriate heat sink is critical to ensuring stable operation of the transistor in high-power applications. The heat sink should be selected based on the recommendations in the data sheet as well as the power dissipation and ambient temperature in the actual application.

6.Actual testing: In actual applications, it is the most direct method to evaluate the heat dissipation performance through actual testing. During testing, the junction temperature and ambient temperature of the transistors can be monitored to ensure they are within safe limits. At the same time, the heat dissipation design can be adjusted, such as changing the size and shape of the heat sink, to optimize the heat dissipation effect.

Ⅳ.Mosfet Maximum Ratings of FDB33N25TM
(TC = 25°C unless otherwise noted)

 

Ⅴ.Gate Charge Test Circuit & Waveform of FDB33N25TM

 

Ⅵ.Main applications of FDB33N25TM

1.Motor driver: In a DC motor control system, FDB33N25TM can be used as a switching device for the motor driver to control the speed and direction of the motor.

•Control motor direction: In DC motor control, by switching the gate signal of FDB33N25TM, the direction of the current can be changed, thereby achieving forward and reverse control of the motor. This is often used in conjunction with other circuits in the motor driver, such as an H-bridge circuit, to achieve motor direction control.

•Control motor speed: The FDB33N25TM's fast switching speed and low on-resistance enable it to respond quickly to control signals to accurately control the motor's speed. By adjusting the duty cycle of the PWM (Pulse Width Modulation) signal, the average current of the motor can be controlled, thereby controlling the motor's speed.

•Improved efficiency: The FDB33N25TM’s low on-resistance helps reduce energy loss in the motor driver, thereby improving the overall efficiency of the system. In addition, fast switching speeds reduce switching losses, further improving efficiency.

•Provides protection: The high current and high voltage capabilities of the FDB33N25TM make it ideal for protecting motors from overload or overvoltage. By integrating current sensing and overvoltage protection, the motor is protected from damage and the life of the system is extended.

2.Switching power supply: In switching mode power supply, FDB33N25TM can be used as a power switch tube to control the current flow in the switching power supply to achieve high-efficiency energy conversion. The FDB33N25TM requires lower gate drive voltage and current, simplifying switching power supply design. In addition, its fast switching speed allows it to quickly respond to control signals, ensuring stable output of the power supply.

3.Lighting control: In lighting control systems, FDB33N25TM can be used for switching and controlling lighting equipment such as LED drivers and fluorescent lamp drivers. Its high-performance characteristics can ensure the stable operation and energy-saving effect of lighting equipment.

•LED drive: LED lighting is favored for its high efficiency and long life, but LEDs require constant current drive to ensure their stable operation and avoid brightness changes. FDB33N25TM can be used as a switching element in an LED drive circuit to provide stable drive current for LEDs through precise current control. The high switching speed and low on-resistance of FDB33N25TM help reduce power consumption in the drive circuit and improve overall efficiency, thereby achieving energy-saving effects in LED lighting.

•Fluorescent lamp drive: Fluorescent lamp drive circuits usually require the use of high-performance switching tubes to control power switching and voltage regulation. FDB33N25TM is suitable for fluorescent lamp drive circuits and can provide fast and accurate switch control to ensure the stable operation of fluorescent lamps. By adjusting the switch status of FDB33N25TM, the brightness and color temperature of fluorescent lamps can be controlled to achieve a more comfortable lighting effect.

•Smart control: With the rise of smart lighting, lighting control systems need to be connected and controlled with smart devices. FDB33N25TM can be integrated with intelligent control systems to realize remote control, timer switch, brightness adjustment and other intelligent functions to enhance user experience.

4.Power management: In various power management circuits, FDB33N25TM can be used to control and adjust current, voltage and other parameters for power management, voltage stabilization and other applications.

•Current control: FDB33N25TM can be used as an efficient switching element for precise control of current in power circuits. By quickly switching between on and off states, it enables fine regulation of current to meet the needs of specific applications.

•Power management: FDB33N25TM can be used in complex power management systems to realize power distribution, monitoring and protection. By integrating FDB33N25TM, output control of multiple power supplies can be achieved to ensure the stability and reliability of the power supply.

•Voltage Regulation: In many power management circuits, FDB33N25TM can be used as a voltage regulator to stabilize the output voltage. By adjusting the on-time and duty cycle of the FDB33N25TM, the output voltage can be precisely controlled to maintain it at the desired level.

•Efficiency Optimization: Since FDB33N25TM has low on-resistance and fast switching speed, its application in power management circuits helps reduce energy loss and improve power conversion efficiency. This is critical for extending device battery life, reducing heat generation, and improving overall system efficiency.

•Overcurrent and overvoltage protection: FDB33N25TM also has overcurrent and overvoltage protection functions that can detect and limit abnormal current and voltage in the circuit, thereby protecting the power system from damage. This protection mechanism is crucial to improve the reliability and stability of the power system.

5.Inverter: In the inverter, FDB33N25TM can be used as the switching tube of the inverter to convert DC power into AC power. It is commonly used in solar inverters, power electronic converters and other applications. The main function of the inverter is to convert direct current (DC) power into alternating current (AC) power. FDB33N25TM serves as the switching tube of the inverter. Driven by the control signal, it quickly switches its switching state and converts DC voltage into AC voltage.

6.Power tools: Power tools such as electric drills and chainsaws require transistors that can withstand high current to drive the motor. The FDB33N25TM's high current handling capability and fast switching speed make it ideal for use in power tools, providing efficient motor control and energy conversion. Power tools usually require a large amount of current to drive the motor when working. The FDB33N25TM has high current handling capabilities and can effectively conduct these high currents without excessive heat or losses, ensuring efficient operation of the power tool.

7.Electric vehicle charging piles: In electric vehicle charging piles, FDB33N25TM can be used as the switch tube of the charger to realize charging and management of electric vehicle batteries. The high-speed switching capability and precise current control capabilities of the FDB33N25TM enable it to accurately control the current and voltage during the charging process. This is critical to protecting the safety and extending the service life of electric vehicle batteries.

8.Electronic transformer: Among electronic transformers, FDB33N25TM can be used for the control and regulation of switching power supplies. Its high voltage withstand capability and low on-resistance enable electronic transformers to operate efficiently and stably. The low on-resistance of FDB33N25TM helps reduce energy loss during the switching process and improves the overall energy conversion efficiency. This means that the electronic transformer can use electrical energy more efficiently during operation and reduce unnecessary heat generation.

 

Ⅶ.Static and dynamic characteristics of FDB33N25TM

•Static features:

1.Gate-source cut-off voltage (VGS(th)): refers to the gate voltage at which the MOSFET begins to conduct. Normally, when the gate voltage exceeds the gate-source cutoff voltage, the MOSFET starts to conduct.

2.On-resistance (RDS(on)): refers to the resistance value when the device is in the on-state, usually measured under the maximum rated current condition. Lower on-resistance means lower conduction losses.

3.Static leakage current (IDSS): refers to the leakage current when the device is in the off state. Low quiescent leakage current is important for power management of power electronic systems.

4.Avalanche withstand voltage (BVDS): refers to the maximum reverse withstand voltage that the device can withstand, that is, when the device is in the cut-off state, the highest reverse voltage that it can withstand.

 

•Dynamic characteristics:

1.Temperature characteristics: Static and dynamic characteristics change with temperature. Temperature has an important impact on the conduction characteristics, switching characteristics and reliability of MOSFET.

2.Input and output capacitance (Ciss, Coss, Crss): It is the input capacitance, output capacitance and reverse conduction capacitance of MOSFET. They affect the MOSFET's high-frequency response and switching speed.

3.Reverse Recovery Time: This parameter is important for some applications (such as MOSFET in reverse conduction mode). It refers to the transition time when the MOSFET switches from reverse conducting to forward blocking.

4.Switching time (Turn-On Time, Turn-Off Time): refers to the time required for the MOSFET to go from fully off to fully on and from fully on to fully off. Short switching times help reduce switching losses.

Ⅷ.Replacement model of FDB33N25TM

•FDN327N
•STP36NF06L
•IRFB33N15DPBF
•IXTP36N25T
•IPP50N25S3L-16

Frequently Asked Questions

1.What are some important considerations for driving the FDB33N25TM MOSFET in a circuit?
Some important considerations for driving the FDB33N25TM MOSFET include ensuring proper gate drive voltage levels, minimizing gate drive loop inductance, and providing adequate cooling to manage thermal dissipation.

2.What type of packaging does the FDB33N25TM MOSFET typically come in?
The FDB33N25TM MOSFET typically comes in a TO-263 (D2PAK) package, which is a popular surface-mount package for power MOSFETs.

3.What is the typical on-state resistance (RDS(on)) of the FDB33N25TM MOSFET?
The typical on-state resistance of the FDB33N25TM MOSFET is around 0.033 ohms, measured at a specified gate-source voltage and drain current.