Wolfspeed's XM3 power modules platform maximizes the benefits of SIC technology while keeping system design simple, robust, and cost-effective.
By Wolfspeed 45
A gallium nitride, high electron mobility transistor (HEMT), from Wolfspeed, designed for high efficiency, high gain and wide bandwidth capabilities.
By Wolfspeed 116
Wolfspeed’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
By Wolfspeed 83
Wolfspeed's CMPA0060002F is a GaN HEMT MMIC distributed driver amplifier, which operates between 20 MHz to 6.0 GHz.
By Wolfspeed 79
Wolfspeed’s CMPA5585030F 30 W GaN MMIC power amplifier comes in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance.
By Wolfspeed 91
Wolfspeed’s CMPA5259050F is a GaN high-electron-mobility-transistor (HEMT) based MMIC designed for high-efficiency, high gain, and wide bandwidth capabilities.
By Wolfspeed 78
Wolfspeed’s CMPA5259025F is a GaN high-electron-mobility-transistor (HEMT) based MMIC designed for high-efficiency, high gain, and wide bandwidth capabilities.
By Wolfspeed 79
Wolfspeed's CCS050M12CM2 silicon carbide six-pack (three phase) module unlocks the traditional design constraints associated with power density, efficiency and cost.
By Wolfspeed 65
Wolfspeed's 50 W CGHV96050F2 GaN HEMT features 10 dB power gain, 55% typical PAE, and <0.1 dB power droop.
By Wolfspeed 50
Wolfspeed's 100 W CGHV96100F2 GaN HEMTs for X-Band radar systems feature 8.4 GHz to 9.6 GHz operation, 10 dB power gain, and less than 0.3 dB power droop.
By Wolfspeed 65
Wolfspeed's 400 W CGHV35400F transistors are ideal for 2.9 GHz to 3.5 GHz S-band radar amplifier applications and are available in ceramic/metal flange package.
By Wolfspeed 45
The 150 W CGHV35150F S-band radar transistors, from Wolfspeed, are designed with high gain, high efficiency, and wide bandwidth capabilities.
By Wolfspeed 55