We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SIHD7N60E-GE3 DISTI # V99:2348_09218416 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 3000 |
|
| SIHD7N60E-GE3 DISTI # V36:1790_09218416 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 0 |
|
| SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 7A TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk | 1355In Stock |
|
| SIHD7N60E-GE3 DISTI # 27527136 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 3000 |
|
| SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3) RoHS: Compliant Min Qty: 3000 | Europe - 2475 |
|
| SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 | |
| SIHD7N60E-GE3 DISTI # 63W4108 | Vishay Intertechnologies | Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes | 2593 |
|
| SIHD7N60E-GE3 DISTI # 78-SIHD7N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 1048 |
|
| SIHD7N60E-E3 DISTI # 78-SIHD7N60E-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 0 |
|
| SIHD7N60EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 3000 | |
| SIHD7N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | Americas - 3000 |
|
| SIHD7N60E-GE3 DISTI # 2283642 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 7A, DPAK RoHS: Compliant | 2293 |
|
| SIHD7N60E-GE3 DISTI # XSKDRABV0041556 | Vishay Intertechnologies | RoHS: Compliant | 2400 in Stock0 on Order |
|
| SIHD7N60E-GE3 DISTI # 2283642 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 7A, DPAK | 2304 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: SIHD7N60ET1-GE3 OMO.#: OMO-SIHD7N60ET1-GE3 |
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
|
|
Mfr.#: SIHD7N60E-GE3 OMO.#: OMO-SIHD7N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
|
|
Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
|
|
Mfr.#: SIHD7N60ET-GE3 OMO.#: OMO-SIHD7N60ET-GE3 |
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
|
Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3-VISHAY |
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
|
Mfr.#: SIHD7N60E-GE3-CUT TAPE |
全新原裝 |
|
|
Mfr.#: SIHD7N60E OMO.#: OMO-SIHD7N60E-1190 |
全新原裝 |
|
|
Mfr.#: SIHD7N60EGE3 OMO.#: OMO-SIHD7N60EGE3-1190 |
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
Mfr.#: SIHD7N60ET4-GE3 OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY |
MOSFET N-CH 600V 7A TO252AA |
|
|
Mfr.#: SIHD7N60ET5-GE3 OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY |
MOSFET N-CH 600V 7A TO252AA |