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SIHD7N60E-E3

SIHD7N60E-E3
Mfr. #:
SIHD7N60E-E3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
生命週期:
製造商新產品
數據表:
SIHD7N60E-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIHD7N60E-E3 DatasheetSIHD7N60E-E3 Datasheet (P4-P6)SIHD7N60E-E3 Datasheet (P7-P9)SIHD7N60E-E3 Datasheet (P10)
ECAD Model:
更多信息:
SIHD7N60E-E3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
7 A
Rds On - 漏源電阻：
600 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
20 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
78 W
配置：
單身的
頻道模式：
增強
打包：
管子
系列：
E
品牌：
威世 / Siliconix
秋季時間：
14 ns
產品類別：
MOSFET
上升時間：
13 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
24 ns
典型的開啟延遲時間：
13 ns
第 # 部分別名：
SIHD7N60E
單位重量：
0.050717 oz
Tags
SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin DPAK
***i-Key
MOSFET N-CH 600V 7A TO-252
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHD7N60E-E3
DISTI # SIHD7N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-252
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.9623
SIHD7N60E-E3
DISTI # SIHD7N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9429
  • 6000:$0.9149
  • 12000:$0.8779
  • 18000:$0.8529
  • 30000:$0.8299
SIHD7N60E-GE3
DISTI # 78-SIHD7N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		1088
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$1.0900
  • 3000:$1.0800
SIHD7N60E-E3
DISTI # 78-SIHD7N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		0
  • 3000:$0.8750
  • 6000:$0.8430
  • 9000:$0.8100
SIHD7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas - 3000
  • 50:$1.2450
  • 100:$1.1020
  • 250:$1.0020
  • 500:$0.9800
  • 1000:$0.9260
圖片 型號 描述
SIHD7N60ET1-GE3

Mfr.#: SIHD7N60ET1-GE3

OMO.#: OMO-SIHD7N60ET1-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3

 MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-GE3-CUT TAPE

Mfr.#: SIHD7N60E-GE3-CUT TAPE

OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190

 全新原裝
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

 全新原裝
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

 MOSFET N-CH 600V 7A TO-252
SIHD7N60EGE3

Mfr.#: SIHD7N60EGE3

OMO.#: OMO-SIHD7N60EGE3-1190

 Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 7A TO252AA
可用性
庫存:
Available
訂購:
4000
輸入數量:
SIHD7N60E-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
3000
US$0.88
US$2 625.00
6000
US$0.84
US$5 058.00
9000
US$0.81
US$7 290.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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