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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSC046N10NS3GATMA1 DISTI # 50Y1804 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
|
BSC046N10NS3 G DISTI # 726-BSC046N10NS3G | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 100 |
|
BSC046N10NS3GATMA1 DISTI # 726-BSC046N10NS3GATM | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 0 |
|
BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC046N10NS3GATMA1 DISTI # 2480739RL | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G |
MOSFET N-Ch 100V 100A TDSON-8 | |
Mfr.#: BSC046N10NS3GATMA1 OMO.#: OMO-BSC046N10NS3GATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 | |
Mfr.#: BSC046N10NS OMO.#: OMO-BSC046N10NS-1190 |
全新原裝 | |
Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G-1190 |
Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) | |
Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | |
Mfr.#: BSC046N10NS3GATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |