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SIHD7N60ET4-GE3

SIHD7N60ET4-GE3
Mfr. #:
SIHD7N60ET4-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds E Series DPAK TO-252
生命週期:
製造商新產品
數據表:
SIHD7N60ET4-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIHD7N60ET4-GE3 DatasheetSIHD7N60ET4-GE3 Datasheet (P4-P6)SIHD7N60ET4-GE3 Datasheet (P7-P9)SIHD7N60ET4-GE3 Datasheet (P10)
ECAD Model:
更多信息:
SIHD7N60ET4-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
609 V
Id - 連續漏極電流：
7 A
Rds On - 漏源電阻：
600 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
40 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
78 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
系列：
E
晶體管類型：
MOSFET
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
24 ns
典型的開啟延遲時間：
13 ns
單位重量：
0.011993 oz
Tags
SIHD7N60ET, SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-252
***i-Key
MOSFET N-CH 600V 7A TO252AA
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHD7N60ET4-GE3
DISTI # V36:1790_17600263		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK0
  • 3000000:$0.7772
  • 1500000:$0.7774
  • 300000:$0.7882
  • 30000:$0.8052
  • 3000:$0.8080
SIHD7N60ET4-GE3
DISTI # SIHD7N60ET4-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO252AA
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.8080
SIHD7N60ET4-GE3
DISTI # SIHD7N60ET4-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD7N60ET4-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7299
  • 18000:$0.7499
  • 12000:$0.7719
  • 6000:$0.8049
  • 3000:$0.8289
SIHD7N60ET4-GE3
DISTI # 78-SIHD7N60ET4-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series DPAK TO-252
RoHS: Compliant		0
  • 1:$1.7700
  • 10:$1.4700
  • 100:$1.1400
  • 500:$0.9970
  • 1000:$0.8260
  • 3000:$0.7690
  • 6000:$0.7410
  • 9000:$0.7120
圖片 型號 描述
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

 MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ETR-GE3

Mfr.#: SIHD7N60ETR-GE3

OMO.#: OMO-SIHD7N60ETR-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ETL-GE3

Mfr.#: SIHD7N60ETL-GE3

OMO.#: OMO-SIHD7N60ETL-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

 全新原裝
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

 MOSFET N-CH 600V 7A TO-252
可用性
庫存:
Available
訂購:
5500
輸入數量:
SIHD7N60ET4-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.77
US$1.77
10
US$1.47
US$14.70
100
US$1.14
US$114.00
500
US$1.00
US$498.50
1000
US$0.83
US$826.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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