QPD1011SR

QPD1011SR
Mfr. #:
QPD1011SR
製造商:
Qorvo
描述:
RF JFET Transistors .03-1.2GHz 7W 50V GaN
生命週期:
製造商新產品
數據表:
QPD1011SR 數據表
交貨:
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ECAD Model:
更多信息:
QPD1011SR 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
21 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
50 V
Vgs - 柵源擊穿電壓:
145 V
Id - 連續漏極電流:
1.46 A
輸出功率:
8.7 W
最大漏柵電壓:
55 V
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
Pd - 功耗:
13 W
安裝方式:
貼片/貼片
包裝/案例:
SMD-8
打包:
捲軸
工作頻率:
30 MHz to 1200 MHz
系列:
QPD1011
品牌:
科沃
正向跨導 - 最小值:
-
開發套件:
QPD1011EVB01
濕氣敏感:
是的
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
100
子類別:
晶體管
第 # 部分別名:
QPD1011
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
圖片 型號 描述
QPD1018

Mfr.#: QPD1018

OMO.#: OMO-QPD1018

RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
QPD1000

Mfr.#: QPD1000

OMO.#: OMO-QPD1000

RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
QPD1003

Mfr.#: QPD1003

OMO.#: OMO-QPD1003

RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
QPD1013SR

Mfr.#: QPD1013SR

OMO.#: OMO-QPD1013SR

RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1017

Mfr.#: QPD1017

OMO.#: OMO-QPD1017

RF JFET Transistors 500 Watt, 50 Volt, 3.1 - 3.5 GHz, GaN RF IMFET
QPD1022SR

Mfr.#: QPD1022SR

OMO.#: OMO-QPD1022SR

RF JFET Transistors DC-12GHz 10W 32V GaN
QPD1019

Mfr.#: QPD1019

OMO.#: OMO-QPD1019

RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
QPD1003

Mfr.#: QPD1003

OMO.#: OMO-QPD1003-RFMD

RF TRANSISTOR
QPD1004SR

Mfr.#: QPD1004SR

OMO.#: OMO-QPD1004SR-1152

RF JFET Transistors .03-1.2GHz 25W 50V GaN
QPD1009

Mfr.#: QPD1009

OMO.#: OMO-QPD1009-318

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
可用性
庫存:
Available
訂購:
1000
輸入數量:
QPD1011SR的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$45.00
US$45.00
25
US$40.00
US$1 000.00
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