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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| HGTG30N60C3D DISTI # V36:1790_06359325 | ON Semiconductor | PWR IGBT UFS 30A 600V W/DIODE | 436 |
|
| HGTG30N60C3D DISTI # V99:2348_06359325 | ON Semiconductor | PWR IGBT UFS 30A 600V W/DIODE | 426 |
|
| HGTG30N60C3D DISTI # HGTG30N60C3D-ND | ON Semiconductor | IGBT 600V 63A 208W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 832In Stock |
|
| HGTG30N60C3D DISTI # 32706923 | ON Semiconductor | PWR IGBT UFS 30A 600V W/DIODE | 574 |
|
| HGTG30N60C3D DISTI # 32401861 | ON Semiconductor | PWR IGBT UFS 30A 600V W/DIODE | 436 |
|
| HGTG30N60C3D DISTI # 25845335 | ON Semiconductor | PWR IGBT UFS 30A 600V W/DIODE | 426 |
|
| HGTG30N60C3D DISTI # HGTG30N60C3D | ON Semiconductor | Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60C3D) RoHS: Compliant Min Qty: 1 | Europe - 220 |
|
| HGTG30N60C3D DISTI # HGTG30N60C3D | ON Semiconductor | Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG30N60C3D) RoHS: Compliant Min Qty: 55 Container: Bulk | Americas - 0 |
|
| HGTG30N60C3D DISTI # HGTG30N60C3D | ON Semiconductor | Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG30N60C3D DISTI # 58K1593 | ON Semiconductor | Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1593) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
|
| HGTG30N60C3D_NL DISTI # HGTG30N60C3D_NL | ON Semiconductor | - Bulk (Alt: HGTG30N60C3D_NL) RoHS: Not Compliant Min Qty: 103 Container: Bulk | Americas - 0 |
|
| HGTG30N60C3D DISTI # 58K1593 | ON Semiconductor | IGBT,N CHANNEL,600V,63A,TO-247,DC Collector Current:63A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes | 574 |
|
| HGTG30N60C3D DISTI # 512-HGTG30N60C3D | ON Semiconductor | IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para RoHS: Compliant | 0 | |
| HGTG30N60C3D | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 9501 |
|
| HGTG30N60C3D_NL | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 57 |
|
| HGTG30N60C3 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Not Compliant | 1500 |
|
| HGTG30N60C3D | Intersil Corporation | IGBT Transistor, TO-247AA | 54 |
|
| HGTG30N60C3 | HARTING Technology Group | 81 | ||
| HGTG30N60C3D | Fairchild Semiconductor Corporation | 645 | ||
| HGTG30N60C3D DISTI # HGTG30N60C3D | ON Semiconductor | Transistor: IGBT,600V,30A,208W,TO247-3 | 60 |
|
| HGTG30N60C3D | Fairchild Semiconductor Corporation | RoHS: Compliant | 2270 | |
| HGTG30N60C3D DISTI # XSKDRABS0006134 | ON SEMICONDUCTOR | TelecomandDatacomConnector,8Contact(s),Female,RightAngle,SolderTerminal,Locking, Jack RoHS: Compliant | 360 in Stock0 on Order |
|
| HGTG30N60C3D DISTI # XSKDRABV0037822 | ON SEMICONDUCTOR | RoHS: Compliant | 1670 in Stock0 on Order |
|
| HGTG30N60C3D DISTI # 1838985 | ON Semiconductor | IGBT,N CH,600V,63A,TO-247 RoHS: Compliant | 1035 |
|
| HGTG30N60C3D DISTI # 1838985 | ON Semiconductor | IGBT,N CH,600V,63A,TO-247 | 1040 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: HGTG30N60B3D OMO.#: OMO-HGTG30N60B3D |
IGBT Transistors 600V IGBT UFS N-Channel |
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Mfr.#: HGTG30N60A4D |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGTG30N60B3D |
IGBT 600V 60A 208W TO247 |
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Mfr.#: HGTG30B60A4D OMO.#: OMO-HGTG30B60A4D-1190 |
全新原裝 |
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Mfr.#: HGTG30N100 OMO.#: OMO-HGTG30N100-1190 |
全新原裝 |
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Mfr.#: HGTG30N120CND OMO.#: OMO-HGTG30N120CND-1190 |
全新原裝 |
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Mfr.#: HGTG30N60 OMO.#: OMO-HGTG30N60-1190 |
全新原裝 |
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Mfr.#: HGTG30N60A OMO.#: OMO-HGTG30N60A-1190 |
全新原裝 |
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Mfr.#: HGTG30N60C3 OMO.#: OMO-HGTG30N60C3-1190 |
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 |
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Mfr.#: HGTG34N100E2 OMO.#: OMO-HGTG34N100E2-1190 |
Insulated Gate Bipolar Transistor, 55A I(C), 1000V V(BR)CES, N-Channel, TO-247 |
