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| PartNumber | HGTG30N60C3D | HGTG30N60C3 | HGTG30N60C3D_NL |
| Description | IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | - Bulk (Alt: HGTG30N60C3D_NL) |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 63 A | - | - |
| Pd Power Dissipation | 208 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTG30N60C3D | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 63 A | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 63 A | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTG30N60C3D_NL | - | - |
| Unit Weight | 0.225401 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG30N60C3D | IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para | |
ON Semiconductor |
HGTG30N60C3D | IGBT 600V 63A 208W TO247 | |
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | ||
| HGTG30N60C3D_NL | - Bulk (Alt: HGTG30N60C3D_NL) |