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HGTG30N60C3D

HGTG30N60C3D
Mfr. #:
HGTG30N60C3D
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
生命週期:
製造商新產品
數據表:
HGTG30N60C3D 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
E
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.5 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
63 A
Pd - 功耗：
208 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
系列：
HGTG30N60C3D
打包：
管子
連續集電極電流 Ic 最大值：
63 A
高度：
20.82 mm
長度：
15.87 mm
寬度：
4.82 mm
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
63 A
柵極-發射極漏電流：
+/- 100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
第 # 部分別名：
HGTG30N60C3D_NL
單位重量：
0.225401 oz
Tags
HGTG30N60C, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
HGTG30N60C3D; IGBT Transistor N-channel; 63 A 600 V; 3- Pin TO-247
***ter Electronics
600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***ical
Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG30N60C3D Series 600 V 63 A Flange Mount UFS N-Channel IGBT-TO-247
***et
SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES
***ser
IGBTs 63a,600V, NCh IGBT Hyperfast anti-para
***Components
TRANSISTOR IGBT N-CH 600V 63A TO247
***i-Key
IGBT NCH UFS 600V 30A TO247
***ment14 APAC
SINGLE IGBT, 600V, 63A
***Semiconductor
600V, PT IGBT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
***nell
IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***rchild Semiconductor
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.
型號 製造商 描述 庫存 價格
HGTG30N60C3D
DISTI # V99:2348_06359325		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE426
  • 900:$4.8179
  • 450:$4.9600
  • 10:$5.7250
  • 1:$6.5160
HGTG30N60C3D
DISTI # HGTG30N60C3D-ND		ON SemiconductorIGBT 600V 63A 208W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		891In Stock
  • 900:$5.1058
  • 450:$5.5999
  • 10:$7.0820
  • 1:$7.8400
HGTG30N60C3D
DISTI # 25845335		ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE426
  • 10:$5.7250
  • 2:$6.5160
HGTG30N60C3D
DISTI # HGTG30N60C3D		ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$4.7900
  • 900:$4.7900
  • 1800:$4.7900
  • 2700:$4.7900
  • 4500:$4.7900
HGTG30N60C3D
DISTI # 58K1593		ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1593)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$5.3400
HGTG30N60C3D
DISTI # 58K1593		ON SemiconductorIGBT,N CHANNEL,600V,63A,TO-247,DC Collector Current:63A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes581
  • 1:$5.5700
HGTG30N60C3D
DISTI # 70418406		ON SemiconductorHGTG30N60C3D,IGBT Transistor N-channel,63 A 600 V,3- Pin TO-247
RoHS: Not Compliant		2
  • 1:$4.1560
HGTG30N60C3D
DISTI # 512-HGTG30N60C3D		ON SemiconductorIGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
RoHS: Compliant		0
    HGTG30N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		9501
    • 1000:$5.9900
    • 500:$6.3000
    • 100:$6.5600
    • 25:$6.8400
    • 1:$7.3700
    HGTG30N60C3D_NLFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		57
    • 1000:$3.2200
    • 500:$3.3900
    • 100:$3.5300
    • 25:$3.6800
    • 1:$3.9700
    HGTG30N60C3DFairchild Semiconductor Corporation 645
      HGTG30N60C3DIntersil CorporationIGBT Transistor, TO-247AA54
      • 6:$3.6000
      • 2:$4.8000
      • 1:$7.2000
      HGTG30N60C3D
      DISTI # 2463194      		ON SemiconductorTRANSISTOR IGBT N-CH 600V 63A TO247, EA1
      • 1:£5.6000
      • 6:£5.1500
      HGTG30N60C3DFairchild Semiconductor Corporation 
      RoHS: Compliant      		Europe - 150
        HGTG30N60C3DFairchild Semiconductor CorporationINSTOCK12
          HGTG30N60C3D  1080
            HGTG30N60C3D
            DISTI # C1S541901524025            		ON SemiconductorIGBT Chip
            RoHS: Not Compliant            		426
            • 100:$4.5700
            • 25:$4.7390
            • 10:$5.1040
            • 1:$6.2100
            HGTG30N60C3D
            DISTI # 1838985            		ON SemiconductorIGBT,N CH,600V,63A,TO-247
            RoHS: Compliant            		1134
            • 1:£6.8100
            • 5:£6.2500
            • 10:£5.6500
            • 50:£5.1200
            • 100:£4.5800
            HGTG30N60C3D
            DISTI # 1838985            		ON SemiconductorIGBT,N CH,600V,63A,TO-247
            RoHS: Compliant            		1107
            • 1:$12.5000
            • 10:$11.2900
            • 450:$8.9300
            • 900:$8.1400
            圖片 型號 描述
            HGTG30N60B3

            Mfr.#: HGTG30N60B3

            OMO.#: OMO-HGTG30N60B3

            		 IGBT Transistors 600V N-Channel IGBT UFS Series
            HGTG30N60B3

            Mfr.#: HGTG30N60B3

            OMO.#: OMO-HGTG30N60B3-ON-SEMICONDUCTOR

            		 IGBT Transistors 600V N-Channel IGBT UFS Series
            HGTG30N100

            Mfr.#: HGTG30N100

            OMO.#: OMO-HGTG30N100-1190

            		 全新原裝
            HGTG30N120C3D

            Mfr.#: HGTG30N120C3D

            OMO.#: OMO-HGTG30N120C3D-1190

            		 全新原裝
            HGTG30N60A

            Mfr.#: HGTG30N60A

            OMO.#: OMO-HGTG30N60A-1190

            		 全新原裝
            HGTG30N60A4 G30N60A4

            Mfr.#: HGTG30N60A4 G30N60A4

            OMO.#: OMO-HGTG30N60A4-G30N60A4-1190

            		 全新原裝
            HGTG30N60B5

            Mfr.#: HGTG30N60B5

            OMO.#: OMO-HGTG30N60B5-1190

            		 全新原裝
            HGTG30N60C3

            Mfr.#: HGTG30N60C3

            OMO.#: OMO-HGTG30N60C3-1190

            		 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
            HGTG30N60C3D_NL

            Mfr.#: HGTG30N60C3D_NL

            OMO.#: OMO-HGTG30N60C3D-NL-1190

            		 - Bulk (Alt: HGTG30N60C3D_NL)
            HGTG30N60B3D_Q

            Mfr.#: HGTG30N60B3D_Q

            OMO.#: OMO-HGTG30N60B3D-Q-1190

            		 IGBT Transistors 600V IGBT UFS N-Channel
            可用性
            庫存:
            Available
            訂購:
            1500
            輸入數量:
            HGTG30N60C3D的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格（美元）
            數量
            單價
            小計金額
            450
            US$5.33
            US$2 398.50
            900
            US$4.86
            US$4 374.00
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