SIHD7N60ET-GE3

SIHD7N60ET-GE3
Mfr. #:
SIHD7N60ET-GE3
製造商:
Vishay / Siliconix
描述:
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
生命週期:
製造商新產品
數據表:
SIHD7N60ET-GE3 數據表
交貨:
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ECAD Model:
更多信息:
SIHD7N60ET-GE3 更多信息
產品屬性
屬性值
製造商
威世 / Siliconix
產品分類
晶體管 - FET、MOSFET - 單
系列
E
打包
捲軸
單位重量
0.050717 oz
安裝方式
貼片/貼片
商品名
E系列
包裝盒
TO-252-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
78 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
4 V
Id 連續漏極電流
7 A
Vds-漏-源-擊穿電壓
600 V
Rds-On-Drain-Source-Resistance
600 mOhms
晶體管極性
N通道
Qg-門電荷
20 nC
Tags
SIHD7N60ET, SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHD7N60ET-GE3
DISTI # 78-SIHD7N60ET-GE3
Vishay IntertechnologiesMOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
RoHS: Compliant
0
  • 2000:$0.8750
  • 4000:$0.8430
圖片 型號 描述
SIHD7N60ET1-GE3

Mfr.#: SIHD7N60ET1-GE3

OMO.#: OMO-SIHD7N60ET1-GE3

MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3-317

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-GE3-CUT TAPE

Mfr.#: SIHD7N60E-GE3-CUT TAPE

OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190

全新原裝
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

MOSFET N-CH 600V 7A TO-252
SIHD7N60EGE3

Mfr.#: SIHD7N60EGE3

OMO.#: OMO-SIHD7N60EGE3-1190

Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY

MOSFET N-CH 600V 7A TO252AA
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY

MOSFET N-CH 600V 7A TO252AA
可用性
庫存:
Available
訂購:
4500
輸入數量:
SIHD7N60ET-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.26
US$1.26
10
US$1.20
US$12.01
100
US$1.14
US$113.81
500
US$1.07
US$537.40
1000
US$1.01
US$1 011.60
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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