BSC

BSC018NE2LS vs BSC018N04LSGXT vs BSC018N04LSGATMA1

 
PartNumberBSC018NE2LSBSC018N04LSGXTBSC018N04LSGATMA1
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.8 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge19 nC150 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W125 W-
ConfigurationSingleSingle-
TradenameOptiMOS-OptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min140 S90 S-
Fall Time3.6 ns9 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4.4 ns7.4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns55 ns-
Typical Turn On Delay Time5.5 ns13 ns-
Part # AliasesBSC018NE2LSATMA1 BSC18NE2LSXT SP000756336BSC018N04LS BSC018N04LSGATMA1 G SP000388293BSC018N04LS BSC18N4LSGXT G SP000388293
Unit Weight0.004176 oz--
Channel Mode-Enhancement-
  • 從...開始
  • BSC 999
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC019N06NSATMA1 MOSFET DIFFERENTIATED MOSFETS
BSC018NE2LS MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC020N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03LSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC019N04LS MOSFET DIFFERENTIATED MOSFETS
BSC019N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC019N04LSATMA1 MOSFET MV POWER MOS
BSC018NE2LSI MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC019N02KS G MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018N04LSGXT MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC019N02KSGAUMA1 MOSFET N-CH 20V 100A TDSON-8
BSC019N04NSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC020N025S G MOSFET N-CH 25V 100A TDSON-8
BSC020N03LSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC019N04LSATMA1 MOSFET N-CH 40V 27A 8TDSON
BSC019N04LSTATMA1 DIFFERENTIATED MOSFETS
BSC019N06NSATMA1 DIFFERENTIATED MOSFETS
BSC018N04LSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC018NE2LSIATMA1 MOSFET N-CH 25V 29A TDSON-8
BSC018NE2LSATMA1 MOSFET N-CH 25V 100A TDSON-8
Infineon Technologies
Infineon Technologies
BSC019N02KSGAUMA1 MOSFET LV POWER MOS
BSC018NE2LSATMA1 MOSFET LV POWER MOS
BSC019N02KSGXT/SAMPLE Trans MOSFET N-CH 20V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC019N02KSGAUMA1)
BSC018N04LSGXT MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018N04LSGATMA1 , TDA3 全新原裝
BSC018NE2L 全新原裝
BSC018NE2LSG 全新原裝
BSC018NE2LSI Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC018NE2LSI BSC018NE2LS 全新原裝
BSC018NE2LSI QFN8 全新原裝
BSC019N02KS 全新原裝
BSC019N02KSG 全新原裝
BSC019N04NS 全新原裝
BSC019N04NS G(SP00038829 全新原裝
BSC019N04NS G) 全新原裝
BSC019N04NS3G 全新原裝
BSC019N04NSG Trans MOSFET N-CH 40V 29A 8-Pin TDSON (Alt: SP000388299)
BSC020N025S 全新原裝
BSC020N025SG 全新原裝
BSC020N02LS 全新原裝
BSC020N03LS 全新原裝
BSC020N03LS3G 全新原裝
BSC020N03LSG Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
BSC020N03LSG,1N4148W T/R 全新原裝
BSC020N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC019N02KS G RF Bipolar Transistors MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC019N04NS G RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC018NE2LS RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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