PartNumber | BSC028N06NSTATMA1 | BSC030N03LS G | BSC029N025S G |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 25V 24A TDSON-8 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 30 V | 25 V |
Id Continuous Drain Current | 100 A | 100 A | 24 A |
Rds On Drain Source Resistance | 2.8 mOhms | 3 mOhms | 2.9 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 1 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 37 nC | 55 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 83 W | 69 W | 2.8 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 50 S | 49 S | - |
Fall Time | 8 ns | 4.8 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 38 ns | 5.2 ns | 8 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | 29 ns | 33 ns |
Typical Turn On Delay Time | 11 ns | 7.3 ns | 7.5 ns |
Part # Aliases | BSC028N06NST SP001666498 | BSC030N03LSGATMA1 BSC3N3LSGXT SP000237661 | BSC029N025SGXT |
Tradename | - | OptiMOS | - |
Height | - | 1.27 mm | 1.27 mm |
Length | - | 5.9 mm | 5.9 mm |
Series | - | OptiMOS 3 | - |
Width | - | 5.15 mm | 5.15 mm |
Moisture Sensitive | - | - | Yes |