PartNumber | IGT60R070D1ATMA1 | IGT60R190D1SATMA1 |
Description | MOSFET 600V CoolGaN Power Transistor | MOSFET 600V CoolGaN Power Transistor |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | GaN | GaN |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PG-HSOF-8 | PG-HSOF-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 31 A | 12.5 A |
Rds On Drain Source Resistance | 70 mOhms | 190 mOhms |
Vgs th Gate Source Threshold Voltage | 0.9 V | 0.9 V |
Vgs Gate Source Voltage | 10 V | 10 V |
Qg Gate Charge | 5.8 nC | 3.2 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 125 W | 55.5 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | CoolGaN | CoolGaN |
Packaging | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies |
Fall Time | 13 ns | 12 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 8 ns | 5 ns |
Factory Pack Quantity | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns | 12 ns |
Typical Turn On Delay Time | 12 ns | 11 ns |
Part # Aliases | SP001300364 | SP001701702 |