ROHM offers silicon carbide (SiC) Schottky barrier diodes in a variety of current ratings and packages. Some features include low forward voltage drop, high peak current (IFSM) ratings, and low leakage. They are available with one or two diodes per package, and some AEC-Q101 qualified models are available for automotive use. The reverse recovery time (t_rr) is virtually constant, regardless of temperature (due primarily to device capacitance). It delivers much lower switching loss than silicon fast recovery diodes (SiFRDs).