CGHV60075D5

Mfr. #:: CGHV60075D5
製造商:: N/A
描述:: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
生命週期:: 製造商新產品
數據表:: CGHV60075D5 數據表
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ECAD Model:
更多信息:: CGHV60075D5 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 16 dB

晶體管極性：: N通道

輸出功率：: 30 W

打包：: 托盤

工作頻率：: 3.5 GHz

系列：: T2G

類型：: 氮化鎵碳化矽 HEMT

品牌：: 科沃

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 36

子類別：: 晶體管

第 # 部分別名：: 1099983

Tags: CGHV6007, CGHV600, CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60075D5 描述

***i-Key: RF MOSFET HEMT 50V DIE

CGHV60075D5 更多信息

CGHV600 6GHz GaN HEMTs: Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More

Market price

型號	製造商	描述	庫存	價格
CGHV60075D5-GP4 DISTI # CGHV60075D5-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	30In Stock	10:$53.5700
CGHV60075D5-GP4 DISTI # CGHV60075D5-GP4	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$53.5700

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