CGHV60040D

CGHV60040D
Mfr. #:
CGHV60040D
製造商:
N/A
描述:
RF JFET Transistors DC-6GHz 40W GaN 50Volt
生命週期:
製造商新產品
數據表:
CGHV60040D 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGHV60040D 更多信息
產品屬性
屬性值
製造商
Cree/Wolfspeed
產品分類
晶體管 - FET、MOSFET - 單
打包
凝膠包
安裝方式
貼片/貼片
工作溫度範圍
-
包裝盒
裸片
技術
氮化鎵碳化矽
配置
雙重的
晶體管型
HEMT
獲得
18 dB
班級
-
輸出功率
40 W
鈀功耗
-
最高工作溫度
-
最低工作溫度
-
應用
-
工作頻率
6 GHz
Id 連續漏極電流
3.2 A
Vds-漏-源-擊穿電壓
50 V
VGS-th-Gate-Source-Threshold-Voltage
-
Rds-On-Drain-Source-Resistance
-
晶體管極性
N通道
正向跨導最小值
-
開發套件
-
VGS-柵極-源極擊穿電壓
-
柵源截止電壓
-
最大漏柵電壓
-
NF-噪聲係數
-
P1dB-壓縮點
-
Tags
CGHV600, CGHV6, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
CGHV600 6GHz GaN HEMTs
Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More
型號 製造商 描述 庫存 價格
CGHV60040D-GP4
DISTI # CGHV60040D-GP4-ND
WolfspeedRF MOSFET HEMT 50V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
550In Stock
  • 10:$42.3360
CGHV60040D
DISTI # 941-CGHV60040D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
RoHS: Compliant
200
  • 10:$42.3400
圖片 型號 描述
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
CGHV60075D5

Mfr.#: CGHV60075D5

OMO.#: OMO-CGHV60075D5

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
CGHV60170D

Mfr.#: CGHV60170D

OMO.#: OMO-CGHV60170D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
CGHV60040D-GP4

Mfr.#: CGHV60040D-GP4

OMO.#: OMO-CGHV60040D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV60075D5-GP4

Mfr.#: CGHV60075D5-GP4

OMO.#: OMO-CGHV60075D5-GP4-WOLFSPEED

RF POWER TRANSISTOR
CGHV60170D-GP4

Mfr.#: CGHV60170D-GP4

OMO.#: OMO-CGHV60170D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D-318

RF JFET Transistors DC-6GHz 40W GaN 50Volt
CGHV60170D

Mfr.#: CGHV60170D

OMO.#: OMO-CGHV60170D-318

RF JFET Transistors DC-6GHz 170W GaN 50Volt
CGHV60075D5

Mfr.#: CGHV60075D5

OMO.#: OMO-CGHV60075D5-318

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
CGHV60075D

Mfr.#: CGHV60075D

OMO.#: OMO-CGHV60075D-318

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
可用性
庫存:
Available
訂購:
5500
輸入數量:
CGHV60040D的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$58.77
US$58.77
10
US$55.83
US$558.31
100
US$52.89
US$5 289.30
500
US$49.95
US$24 977.25
1000
US$47.02
US$47 016.00
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