CGHV60170D

Mfr. #:: CGHV60170D
製造商:: N/A
描述:: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
生命週期:: 製造商新產品
數據表:: CGHV60170D 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: CGHV60170D 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

技術：: 氮化鎵碳化矽

Vds - 漏源擊穿電壓：: 32 V

Vgs - 柵源擊穿電壓：: 100 V

Pd - 功耗：: 45 W

安裝方式：: 貼片/貼片

打包：: 托盤

配置：: 單身的

高度：: 4.064 mm

長度：: 9.652 mm

寬度：: 5.842 mm

品牌：: 科沃

柵源截止電壓：: - 2.9 V

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 50

子類別：: 晶體管

第 # 部分別名：: 1092444

Tags: CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60170D 描述

***i-Key: RF MOSFET HEMT 50V DIE

CGHV60170D 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

型號	製造商	描述	庫存	價格
CGHV60170D-GP4 DISTI # CGHV60170D-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	10In Stock	10:$156.7360
CGHV60170D DISTI # 941-CGHV60170D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt RoHS: Compliant	40	10:$156.4900
CGHV60170D-GP4 DISTI # CGHV60170D-GP4	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$156.7400

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