CGHV60170D

CGHV60170D
Mfr. #:
CGHV60170D
製造商:
N/A
描述:
RF JFET Transistors DC-6GHz 170W GaN 50Volt
生命週期:
製造商新產品
數據表:
CGHV60170D 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
CGHV60170D 更多信息
產品屬性
屬性值
製造商
Wolfspeed / 克里
產品分類
晶體管 - FET、MOSFET - 單
打包
凝膠包
安裝方式
貼片/貼片
工作溫度範圍
-
包裝盒
裸片
技術
氮化鎵碳化矽
晶體管型
HEMT
獲得
18 dB
班級
-
輸出功率
170 W
鈀功耗
-
最高工作溫度
-
最低工作溫度
-
應用
-
工作頻率
6 GHz
Id 連續漏極電流
12.6 A
Vds-漏-源-擊穿電壓
50 V
VGS-th-Gate-Source-Threshold-Voltage
-
Rds-On-Drain-Source-Resistance
-
晶體管極性
N通道
正向跨導最小值
-
開發套件
-
VGS-柵極-源極擊穿電壓
-
柵源截止電壓
-
最大漏柵電壓
-
NF-噪聲係數
-
P1dB-壓縮點
-
Tags
CGHV6, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型號 製造商 描述 庫存 價格
CGHV60170D-GP4
DISTI # CGHV60170D-GP4-ND
WolfspeedRF MOSFET HEMT 50V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
10In Stock
  • 10:$156.7360
CGHV60170D
DISTI # 941-CGHV60170D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
RoHS: Compliant
40
  • 10:$156.4900
CGHV60170D-GP4
DISTI # CGHV60170D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$156.7400
圖片 型號 描述
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
CGHV60075D5

Mfr.#: CGHV60075D5

OMO.#: OMO-CGHV60075D5

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
CGHV60170D

Mfr.#: CGHV60170D

OMO.#: OMO-CGHV60170D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
CGHV60040D-GP4

Mfr.#: CGHV60040D-GP4

OMO.#: OMO-CGHV60040D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV60075D5-GP4

Mfr.#: CGHV60075D5-GP4

OMO.#: OMO-CGHV60075D5-GP4-WOLFSPEED

RF POWER TRANSISTOR
CGHV60170D-GP4

Mfr.#: CGHV60170D-GP4

OMO.#: OMO-CGHV60170D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D-318

RF JFET Transistors DC-6GHz 40W GaN 50Volt
CGHV60170D

Mfr.#: CGHV60170D

OMO.#: OMO-CGHV60170D-318

RF JFET Transistors DC-6GHz 170W GaN 50Volt
CGHV60075D5

Mfr.#: CGHV60075D5

OMO.#: OMO-CGHV60075D5-318

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
CGHV60075D

Mfr.#: CGHV60075D

OMO.#: OMO-CGHV60075D-318

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
可用性
庫存:
Available
訂購:
3500
輸入數量:
CGHV60170D的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$234.74
US$234.74
10
US$223.00
US$2 229.98
100
US$211.26
US$21 126.15
500
US$199.52
US$99 762.40
1000
US$187.79
US$187 788.00
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