OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

IGO60R070D1AUMA1

IGO60R070D1AUMA1
Mfr. #:
IGO60R070D1AUMA1
製造商:
Infineon Technologies
描述:
MOSFET 600V CoolGaN Power Transistor
生命週期:
製造商新產品
數據表:
IGO60R070D1AUMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IGO60R070D1AUMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
氮化鎵
安裝方式：
貼片/貼片
包裝/案例：
PG-DSO-20
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
31 A
Rds On - 漏源電阻：
70 mOhms
Vgs th - 柵源閾值電壓：
0.9 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
5.8 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
頻道模式：
增強
商品名：
冷卻氮化鎵
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
10 ns
濕氣敏感：
是的
產品類別：
MOSFET
上升時間：
7 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
11 ns
典型的開啟延遲時間：
13 ns
第 # 部分別名：
SP001300362
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
型號 製造商 描述 庫存 價格
IGO60R070D1AUMA1
DISTI # V72:2272_22710690		Infineon Technologies AGIGO60R070D1AUMA10
    IGO60R070D1AUMA1
    DISTI # V36:1790_22710690    		Infineon Technologies AGIGO60R070D1AUMA10
    • 400000:$13.6900
    • 80000:$14.6300
    • 8000:$16.6600
    • 800:$17.0200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1CT-ND    		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1DKR-ND    		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1TR-ND    		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 800:$17.0240
    IGO60R070D1AUMA1
    DISTI # SP001300362    		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 100
    • 8000:€13.6900
    • 4800:€14.2900
    • 3200:€15.0900
    • 1600:€15.2900
    • 800:€15.6900
    IGO60R070D1AUMA1/SAMPLE
    DISTI # IGO60R070D1AUMA1/SAMPLE    		Infineon Technologies AGTransistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray    		Americas - 5
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1      		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel      		Americas - 0
      • 8000:$14.8900
      • 4800:$15.0900
      • 3200:$15.6900
      • 1600:$16.2900
      • 800:$16.8900
      IGO60R070D1AUMA1
      DISTI # 84AC1770      		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes974
      • 500:$16.3800
      • 250:$17.2100
      • 100:$18.0400
      • 50:$19.1100
      • 25:$20.1800
      • 10:$21.1300
      • 1:$22.9100
      IGO60R070D1AUMA1
      DISTI # 726-IGO60R070D1AUMA1      		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
      RoHS: Compliant      		0
      • 1:$22.6800
      • 5:$22.4400
      • 10:$20.9200
      • 25:$19.9800
      • 100:$17.8600
      • 250:$17.0400
      • 500:$16.2200
      • 800:$14.1000
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1      		Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
      • 10:$22.5500
      • 3:$25.5900
      • 1:$28.4100
      IGO60R070D1AUMA1
      DISTI # 2981531      		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
      RoHS: Compliant      		974
      • 800:$23.5100
      • 500:$26.0500
      • 100:$26.9300
      • 50:$29.3700
      • 1:$32.3000
      • 10:$32.3000
      IGO60R070D1AUMA1
      DISTI # 2981531      		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W954
      • 100:£13.0800
      • 50:£13.8600
      • 10:£14.6300
      • 5:£16.4300
      • 1:£16.6000
      圖片 型號 描述
      IGT60R070D1ATMA1

      Mfr.#: IGT60R070D1ATMA1

      OMO.#: OMO-IGT60R070D1ATMA1

      		 MOSFET 600V CoolGaN Power Transistor
      IGT60R190D1SATMA1

      Mfr.#: IGT60R190D1SATMA1

      OMO.#: OMO-IGT60R190D1SATMA1

      		 MOSFET 600V CoolGaN Power Transistor
      IGOT60R070D1AUMA1

      Mfr.#: IGOT60R070D1AUMA1

      OMO.#: OMO-IGOT60R070D1AUMA1

      		 MOSFET 600V CoolGaN Power Transistor
      IGLD60R070D1AUMA1

      Mfr.#: IGLD60R070D1AUMA1

      OMO.#: OMO-IGLD60R070D1AUMA1

      		 MOSFET 600V CoolGaN Power Transistor
      LMG1020YFFR

      Mfr.#: LMG1020YFFR

      OMO.#: OMO-LMG1020YFFR

      		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
      LMG3410R070RWHT

      Mfr.#: LMG3410R070RWHT

      OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS

      		 PWR MGMT MOSFET/PWR DRIVER
      1EDF5673FXUMA1

      Mfr.#: 1EDF5673FXUMA1

      OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

      		 IC DRIVER IC GAN DSO-16-11
      1EDS5663HXUMA1

      Mfr.#: 1EDS5663HXUMA1

      OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

      		 IC DRIVER IC GAN DSO-16
      LMG3411R070RWHT

      Mfr.#: LMG3411R070RWHT

      OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

      		 600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
      IGOT60R070D1AUMA1

      Mfr.#: IGOT60R070D1AUMA1

      OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES

      		 IC GAN FET 600V 60A 20DSO
      可用性
      庫存:
      703
      訂購:
      2686
      輸入數量:
      IGO60R070D1AUMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$22.68
      US$22.68
      5
      US$22.44
      US$112.20
      10
      US$20.92
      US$209.20
      25
      US$19.98
      US$499.50
      100
      US$17.86
      US$1 786.00
      250
      US$17.04
      US$4 260.00
      500
      US$16.22
      US$8 110.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
      從...開始
      最新產品
      More Newest Products
      Top