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IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
Mfr. #:
IGOT60R070D1AUMA1
製造商:
Infineon Technologies
描述:
MOSFET 600V CoolGaN Power Transistor
生命週期:
製造商新產品
數據表:
IGOT60R070D1AUMA1 數據表
交貨:
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ECAD Model:
更多信息:
IGOT60R070D1AUMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
氮化鎵
安裝方式：
貼片/貼片
包裝/案例：
PG-DSO-20
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
31 A
Rds On - 漏源電阻：
70 mOhms
Vgs th - 柵源閾值電壓：
0.9 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
5.8 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
頻道模式：
增強
商品名：
冷卻氮化鎵
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
13 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
15 ns
典型的開啟延遲時間：
15 ns
第 # 部分別名：
SP001505772
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
型號 製造商 描述 庫存 價格
IGOT60R070D1AUMA1
DISTI # V72:2272_22710691		Infineon Technologies AGIGOT60R070D1AUMA1293
  • 75000:$15.6200
  • 30000:$15.7200
  • 15000:$15.8200
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$17.0240
IGOT60R070D1AUMA1
DISTI # 32907523		Infineon Technologies AGIGOT60R070D1AUMA1293
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 60A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGOT60R070D1AUMA1)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$14.8900
  • 4800:$15.0900
  • 3200:$15.6900
  • 1600:$16.2900
  • 800:$16.8900
IGOT60R070D1AUMA1
DISTI # 84AC1769		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes87
  • 500:$16.3800
  • 250:$17.2100
  • 100:$18.0400
  • 50:$19.1100
  • 25:$20.1800
  • 10:$21.1300
  • 1:$22.9100
IGOT60R070D1AUMA1
DISTI # 726-IGOT60R070D1AUMA		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant		468
  • 1:$22.6800
  • 5:$22.4400
  • 10:$20.9200
  • 25:$19.9800
  • 100:$17.8600
  • 250:$17.0400
  • 500:$16.2200
  • 800:$14.1000
IGOT60R070D1AUMA1
DISTI # 2981533		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W87
  • 100:£13.0800
  • 50:£13.8600
  • 10:£14.6300
  • 5:£16.4300
  • 1:£16.6000
IGOT60R070D1AUMA1
DISTI # 2981533		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
RoHS: Compliant		87
  • 800:$22.9000
  • 500:$26.0500
  • 100:$26.9300
  • 50:$29.3700
  • 1:$32.3000
  • 10:$32.3000
圖片 型號 描述
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148

 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

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 MOSFET 600V CoolGaN Power Transistor
IGT60R190D1SATMA1

Mfr.#: IGT60R190D1SATMA1

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 MOSFET 600V CoolGaN Power Transistor
IGO60R070D1AUMA1

Mfr.#: IGO60R070D1AUMA1

OMO.#: OMO-IGO60R070D1AUMA1

 MOSFET 600V CoolGaN Power Transistor
IGLD60R070D1AUMA1

Mfr.#: IGLD60R070D1AUMA1

OMO.#: OMO-IGLD60R070D1AUMA1

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PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

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GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
ACPL-P346-000E

Mfr.#: ACPL-P346-000E

OMO.#: OMO-ACPL-P346-000E

 Logic Output Optocouplers OPTOCOUPLER GATE DRV, LF
1EDF5673FXUMA1

Mfr.#: 1EDF5673FXUMA1

OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

 IC DRIVER IC GAN DSO-16-11
1EDS5663HXUMA1

Mfr.#: 1EDS5663HXUMA1

OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

 IC DRIVER IC GAN DSO-16
可用性
庫存:
464
訂購:
2447
輸入數量:
IGOT60R070D1AUMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$22.68
US$22.68
5
US$22.44
US$112.20
10
US$20.92
US$209.20
25
US$19.98
US$499.50
100
US$17.86
US$1 786.00
250
US$17.04
US$4 260.00
500
US$16.22
US$8 110.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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