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FDFMA3N109

FDFMA3N109
Mfr. #:
FDFMA3N109
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET PowerTrench MOSFET and Schottky Diode
生命週期:
製造商新產品
數據表:
FDFMA3N109 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
MicroFET-6
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
2.9 A
Rds On - 漏源電阻：
123 mOhms
Vgs - 柵源電壓：
12 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1.5 W
配置：
單身的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
0.75 mm
長度：
2 mm
產品：
MOSFET 小信號
系列：
FDFMA3N109
晶體管類型：
1 N-Channel
寬度：
2 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
8 ns
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
12 ns
典型的開啟延遲時間：
6 ns
單位重量：
0.002116 oz
Tags
FDFMA3, FDFMA, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
***ment14 APAC
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
型號 製造商 描述 庫存 價格
FDFMA3N109
DISTI # V72:2272_06337763		ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
  • 1:$0.6695
FDFMA3N109
DISTI # FDFMA3N109FSCT-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSDKR-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSTR-ND		ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		21000In Stock
  • 3000:$0.3155
FDFMA3N109
DISTI # 25745010		ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 29:$0.5657
FDFMA3N109
DISTI # FDFMA3N109		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3319
  • 6000:€0.2719
  • 12000:€0.2489
  • 18000:€0.2299
  • 30000:€0.2129
FDFMA3N109
DISTI # FDFMA3N109		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2359
  • 6000:$0.2339
  • 12000:$0.2309
  • 18000:$0.2279
  • 30000:$0.2219
FDFMA3N109
DISTI # 04M9094		ON SemiconductorTRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$0.2670
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		75450
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
FDFMA3N109
DISTI # 512-FDFMA3N109		ON SemiconductorMOSFET PowerTrench MOSFET and Schottky Diode
RoHS: Compliant		5668
  • 1:$0.7400
  • 10:$0.6140
  • 100:$0.3960
  • 1000:$0.3170
  • 3000:$0.2680
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109
DISTI # 1324787RL		ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant		0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # 1324787		ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant		0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # C1S541901518927		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R
RoHS: Compliant		1923
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
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IGT60R190D1SATMA1

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IGO60R070D1AUMA1

Mfr.#: IGO60R070D1AUMA1

OMO.#: OMO-IGO60R070D1AUMA1

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IGOT60R070D1AUMA1

Mfr.#: IGOT60R070D1AUMA1

OMO.#: OMO-IGOT60R070D1AUMA1

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SI2308CDS-T1-GE3

Mfr.#: SI2308CDS-T1-GE3

OMO.#: OMO-SI2308CDS-T1-GE3

 MOSFET 60V Vds 20V Vgs SOT-23
TLP183(YH-TPL,E

Mfr.#: TLP183(YH-TPL,E

OMO.#: OMO-TLP183-YH-TPL-E

 Transistor Output Optocouplers X36 PBF Trans Opto couplr 110C3750Vrms
SI2308CDS-T1-GE3

Mfr.#: SI2308CDS-T1-GE3

OMO.#: OMO-SI2308CDS-T1-GE3-VISHAY

 MOSFET N-CH 60V 2.6A SOT23-3
TLP183(YH-TPL,E

Mfr.#: TLP183(YH-TPL,E

OMO.#: OMO-TLP183-YH-TPL-E-TOSHIBA-SEMICONDUCTOR-AND-STOR

 Transistor Output Optocouplers X36 PBF Trans Opto couplr 110C3750Vrms
IGOT60R070D1AUMA1

Mfr.#: IGOT60R070D1AUMA1

OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES

 IC GAN FET 600V 60A 20DSO
可用性
庫存:
Available
訂購:
1988
輸入數量:
FDFMA3N109的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.74
US$0.74
10
US$0.61
US$6.14
100
US$0.40
US$39.60
1000
US$0.32
US$317.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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