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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC047N08NS3G DISTI # BSC047N08NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC047N08NS3GATMA1. DISTI # 31AC8216 | Infineon Technologies AG | Continuous Drain Current Id:18A,Drain Source Voltage Vds:80V,Automotive Qualification Standard:- | 0 |
|
| BSC047N08NS3 G DISTI # 60R2492 | Infineon Technologies AG | MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 44 |
|
| BSC047N08NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 21 |
|
| BSC047N08NS3 G DISTI # 726-BSC047N08NS3G | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC047N08NS3GATMA1 DISTI # 726-BSC047N08NS3GATM | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC047N08NS3G | Infineon Technologies AG | 96 | ||
| BSC047N08NS3GATMA1 DISTI # 9064347P | Infineon Technologies AG | MOSFET N-CHANNEL 80V 18A TDSON8 EP, RL | 10 |
|
| BSC047N08NS3G | Infineon Technologies AG | 18 A, 80 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET | 120 |
|
| BSC047N08NS3GXT | Infineon Technologies AG | 18 A, 80 V, 0.0047 OHM, N-CHANNEL, SI, POWER, MOSFET | 176 |
|
| BSC047N08NS3 G DISTI # 1775444 | Infineon Technologies AG | MOSFET, N CH, 100A, 80V, PG-TDSON-8 RoHS: Compliant | 44 |
|
| BSC047N08NS3 G DISTI # 1775444 | Infineon Technologies AG | MOSFET, N CH, 100A, 80V, PG-TDSON-8 RoHS: Compliant | 44 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSC042N03MS G OMO.#: OMO-BSC042N03MS-G |
MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M |
|
|
Mfr.#: BSC046N10NS3GATMA1 OMO.#: OMO-BSC046N10NS3GATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |
|
|
Mfr.#: BSC040N08NS5ATMA1 OMO.#: OMO-BSC040N08NS5ATMA1 |
MOSFET N-Ch 80V 100A TDSON-8 |
|
|
Mfr.#: BSC040N10NS5ATMA1 OMO.#: OMO-BSC040N10NS5ATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |
|
Mfr.#: BSC042NE7NS3 OMO.#: OMO-BSC042NE7NS3-1190 |
全新原裝 |
|
|
Mfr.#: BSC046N02KS OMO.#: OMO-BSC046N02KS-1190 |
全新原裝 |
|
|
Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
|
|
Mfr.#: BSC047N08NS3G OMO.#: OMO-BSC047N08NS3G-1190 |
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) |
|
Mfr.#: BSC047N08NS3GATMA1 |
MOSFET N-CH 80V 100A TDSON-8 |
|
|
Mfr.#: BSC046N10NS3GATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |